Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions,Advanced Electronic Materials

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Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-11-14 , DOI: 10.1002/aelm.201900852
Milena Cervo Sulzbach ₁ , Saúl Estandía ₁ , Xiao Long ₁ , Jike Lyu ₁ , Nico Dix ₁ , Jaume Gàzquez ₁ , Matthew F. Chisholm ₂ , Florencio Sánchez ₁ , Ignasi Fina ₁ , Josep Fontcuberta ₁

Affiliation

Tunnel devices based on ferroelectric Hf_0.5Zr_0.5O₂ (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed through use of a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect‐related transport mechanisms. The fundamental role of the microstructure of HZO films determining the balance between those contributions is demonstrated. The HZO film presents coherent or incoherent grain boundaries, associated to the coexistance of monoclinic and orthorhombic phases, which are dictated by the mismatch with the substrates for epitaxial growth. These grain boundaries are the toggle that allows to obtain either large (up to ≈450%) and fully reversible genuine polarization controlled electroresistance when only the orthorhombic phase is present or an irreversible and extremely large (≈10³–10⁵%) electroresistance when both phases coexist.

中文翻译：

在外延Hf0.5Zr0.5O2隧道结中解开铁电极化和离子对电阻的贡献

基于铁电Hf _0.5 Zr _0.5 O _2的隧道装置（HZO）壁垒对新兴的数据存储和计算技术具有广阔的前景。可以通过使用适当的写入电压来改变设备的电阻状态。但是，导致电阻变化的微观机制是铁电极化控制的势垒性质与缺陷相关的传输机制之间的复杂相互作用。证明了HZO膜的微观结构的基本作用，决定了这些作用之间的平衡。HZO膜呈现出与单斜晶相和正交晶相共存相关的连贯或不连贯的晶界，这是由与用于外延生长的基板的不匹配所决定的。两相共存时，电阻为^{3 –} 10 ⁵％。

更新日期：2020-01-13

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