Near‐Infrared‐Irradiation‐Mediated Synaptic Behavior from Tunable Charge‐Trapping Dynamics,Advanced Electronic Materials

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Near‐Infrared‐Irradiation‐Mediated Synaptic Behavior from Tunable Charge‐Trapping Dynamics
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-11-13 , DOI: 10.1002/aelm.201900765
Yan Wang _{1,

2} , Jing Yang ₃ , Wenbin Ye ₁ , Donghong She ₁ , Jinrui Chen ₄ , Ziyu Lv _{1,

5} , Vellaisamy A. L. Roy ₆ , Huilin Li ₁ , Kui Zhou ₁ , Qing Yang ₃ , Ye Zhou ₄ , Su‐Ting Han ₁

Affiliation

Parallel information storage coupled with storage density is a major focus for non‐volatile memory devices to achieve neuromorphic computing that can work at low power. In this regard, a photoactive charge‐trapping medium consisting of inorganic heteronanosheets for the fabrication of a synaptic transistor is demonstrated. This synaptic device senses and responds to near‐infrared (NIR) light signals and mimics the memorization and dynamic forgetting process due to the reversible nature of photogenerated charge interaction. Device‐level synaptic evolutions from short‐term plasticity to long‐term plasticity, paired pulse facilitation, and paired pulse depression are realized with light modulation on the weight update terminal. To understand the underlying mechanism of the synaptic behavior under NIR signals, systematic analysis is carried out using in situ atomic force microscopy based electrical techniques. With its photoactive architecture, this information processing analogue is validated for visual object recognition, which paves the way for implementing NIR‐controlled neuromorphic computing.

中文翻译：

可调谐电荷诱捕动力学中的近红外辐照介导的突触行为

并行信息存储和存储密度是非易失性存储设备实现可在低功耗下运行的神经形态计算的主要重点。在这方面，展示了一种由无机异质片组成的光活性电荷捕获介质，用于制造突触晶体管。由于光生电荷相互作用的可逆性，该突触设备可感应并响应近红外（NIR）光信号，并模仿记忆和动态遗忘过程。通过在重量更新终端上进行光调制，可以实现从短期可塑性到长期可塑性的设备级突触演变，成对脉冲促进和成对脉冲抑制。要了解NIR信号下突触行为的潜在机制，使用基于原位原子力显微镜的电气技术进行系统分析。借助其光敏体系结构，该信息处理类似物已针对视觉对象识别进行了验证，这为实现NIR控制的神经形态计算铺平了道路。

更新日期：2020-02-13

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