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Ionic Liquid Gating Control of Spin Wave Resonance in La0.7Sr0.3MnO3 Thin Film
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-11-13 , DOI: 10.1002/aelm.201900859
Shishun Zhao 1 , Weixiao Hou 1 , Ziyao Zhou 1 , Yaojin Li 1 , Mingmin Zhu 1 , Haobo Li 2 , Chunlei Li 1 , Zhongqiang Hu 1 , Pu Yu 2 , Ming Liu 1
Affiliation  

Magnonics or spin waves have the potential to serve as the carrier for future information communication. A controllable spin wave resonance (SWR) device is demonstrated in a Au/[DEME]+[TFSI]/LSMO/STO capacitor heterostructure, which could be regulated by ionic liquid gating (ILG) method. The SWR critical angle φC, excitation position to perform uniform precession, is shifted in a reversible manner (thus recording “off” and “on”) with +1.5 V gating voltage (Vg), measured by quantitative angular dependent electron spin resonance (ESR) spectroscopy. Based on the modified Puszkarski's surface inhomogeneity model, the ILG control SWR at low Vg (Vg < 1.5 V) can be explained by a charge‐doping‐induced effective surface magnetic anisotropy change. Applying a higher Vg (Vg > 1.5 V) enhances the surface mode SWR and gradually diminishes the body mode SWR. Oxygen vacancies generate at higher Vg (Vg > 1.5 V) resulting in the modulation of superexchange between the Mn ions, evidenced by X‐ray photoelectron spectroscopy and secondary ion mass spectroscopy characterization. This ILG control SWR presents a solution for energy efficient and low‐voltage control of magnonics and spin wave devices.

中文翻译:

La0.7Sr0.3MnO3薄膜中自旋波共振的离子液体门控控制

电磁波或自旋波有可能充当未来信息通信的载体。在Au / [DEME] + [TFSI] - / LSMO / STO电容器异质结构中证明了可控自旋波谐振(SWR)器件,该结构可以通过离子液体门控(ILG)方法进行调节。φ的SWR临界角Ç,励磁位置来执行均匀的进动,以可逆的方式与+ 1.5V的电压门控(移位(因而记录“断开”和“接通”)V),通过定量角变电子自旋共振测量的(ESR)光谱。基于改进的Puszkarski的表面不均匀性模型,ILG在低V gV g<1.5 V)可以通过电荷掺杂引起的有效表面磁各向异性变化来解释。施加更高的V gV g > 1.5 V)会增强表面模式SWR,并逐渐减小体模式SWR。氧空位在较高的V gV g > 1.5 V)处产生,从而导致Mn离子之间的超交换的调制,这通过X射线光电子能谱和二次离子质谱表征得到了证明。该ILG控制SWR提出了一种解决方案,用于对磁控管和自旋波设备进行节能和低压控制。
更新日期:2020-01-13
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