As personal electronic devices increasingly rely on cloud computing for energy-intensive calculations, the power consumption associated with the information revolution is rapidly becoming an important environmental issue. Several approaches have been proposed to construct electronic devices with low-energy consumption. Among these, the low-dissipation surface states of topological insulators (TIs) are widely employed. To develop TI-based devices, a key factor is the maximum temperature at which the Dirac surface states dominate the transport behavior. Here, we employ Shubnikov-de Haas oscillations (SdH) as a means to study the surface state survival temperature in a high-quality vanadium doped Bi_1.08Sn_0.02Sb_0.9Te₂S single crystal system. The temperature and angle dependence of the SdH show that: (1) crystals with different vanadium (V) doping levels are insulating in the 3–300 K region; (2) the SdH oscillations show two-dimensional behavior, indicating that the oscillations arise from the pure surface states; and (3) at 50 K, the V_0.04 single crystals (V_x:Bi_1.08-xSn_0.02Sb_0.9Te₂S, where x = 0.04) still show clear sign of SdH oscillations, which demonstrate that the surface dominant transport behavior can survive above 50 K. The robust surface states in our V doped single crystal systems provide an ideal platform to study the Dirac fermions and their interaction with other materials above 50 K.

随着个人电子设备越来越依赖云计算进行能源密集型计算，与信息革命相关的功耗正迅速成为重要的环境问题。已经提出了几种方法来构造具有低能耗的电子设备。其中，拓扑绝缘体（TI）的低耗散表面态被广泛采用。要开发基于TI的器件，关键因素是Dirac表面态主导传输行为的最高温度。在这里，我们采用Shubnikov-de Haas振荡（SdH）作为研究高质量钒掺杂的Bi _1.08 Sn _0.02 Sb _0.9 Te ₂的表面态存活温度的方法S单晶系统。SdH的温度和角度依赖性表明：（1）钒（V）掺杂水平不同的晶体在3–300 K范围内处于绝缘状态；（2）SdH振荡表现出二维行为，表明该振荡源于纯表面态。和（3）在50 K，在V _0.04单晶（V _X：毕_{1.08- X}锡_0.02锑_0.9碲₂ S，其中X = 0.04）仍然显示出SdH振荡的清晰信号，这表明表面主导的输运行为可以在50 K以上的环境下生存。我们的V掺杂单晶系统中稳健的表面态为研究狄拉克费米子及其与其他元素的相互作用提供了理想的平台50 K以上的材料。