The paper introduces a modified approach of time resolved in-situ diagnostics of highly reactive discharges (C2H2 in our case) usually used for a deposition process of various non-conductive thin films. Reactive plasma could create an insulating film onto inserted diagnostic tools, which distorts measured data and makes their processing unreliable; a typical problem of Langmuir probe measurements. The proposed approach utilizes a so-called radiofrequency (rf) Sobolewski probe for ion flux measurement which is further modified to also obtain the electron temperature in some cases and the ion density. In this work, we introduce the procedure where measured rf probe characteristics are transformed towards I-V curves of the plasma sheath with subtracted capacitive current. This processing enables not only the monitoring of plasma sheath impedance and the ion flux towards the substrate but also allows for an estimation of other parameters as the plasma density or electron temperature, respectively. We demonstrate that the substrate used for thin film deposition can act as an active probe itself. The relevance of the proposed method was verified in pure Ar discharge where the results correspond with conventional Langmuir probe diagnostics. Furthermore, internal plasma parameters of highly reactive Ar/C2H2 plasma, formed from acetylene, were evaluated, too.

中文翻译：

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用于诊断高反应性等离子体的改良高频探针方法

本文介绍了一种改进的时间分辨原位诊断高反应性放电（在我们的案例中为 C2H2）方法，该方法通常用于各种非导电薄膜的沉积过程。反应等离子体可以在插入的诊断工具上形成绝缘膜，从而扭曲测量数据并使其处理不可靠；朗缪尔探针测量的一个典型问题。所提出的方法利用所谓的射频 (rf) Sobolewski 探针进行离子通量测量，该探针经过进一步修改以在某些情况下还可以获得电子温度和离子密度。在这项工作中，我们介绍了将测量的 rf 探头特性转换为具有减去电容电流的等离子体鞘的 IV 曲线的过程。这种处理不仅可以监测等离子体鞘阻抗和朝向基板的离子通量，还可以分别估计其他参数，如等离子体密度或电子温度。我们证明用于薄膜沉积的基板本身可以充当有源探针。在纯 Ar 放电中验证了所提出方法的相关性，其中结果与传统的朗缪尔探针诊断一致。此外，还评估了由乙炔形成的高反应性 Ar/C2H2 等离子体的内部等离子体参数。在纯 Ar 放电中验证了所提出方法的相关性，其中结果与传统的朗缪尔探针诊断一致。此外，还评估了由乙炔形成的高反应性 Ar/C2H2 等离子体的内部等离子体参数。在纯 Ar 放电中验证了所提出方法的相关性，其中结果与传统的朗缪尔探针诊断一致。此外，还评估了由乙炔形成的高反应性 Ar/C2H2 等离子体的内部等离子体参数。