Low‐dimensional MXene materials including MXene quantum dots (MQDs) and nanosheets have attracted extensive attention owing to their unique structures and novel properties, but their most attractive features are still less explored than expected. A systematic study of the memory effects of MQD‐based electronics is reported. Monodisperse MQDs are prepared by using a one‐step facile hydrothermal synthetic method. By varying the MQD content in polyvinylpyrrolidone (PVP) hybrid composite films, the electrical conductance of an indium tin oxide (ITO)/MQD‐PVP/gold (Au) sandwich structure can be tuned precisely from insulator behavior to irreversible resistive switching, reversible resistive switching, and conductor behavior. These irreversible and reversible resistive switches are capable of exhibiting write‐once‐read‐many times (WORM) and flash memory effects, respectively. Both types of devices operate stably under retention testing, with a high on/off current ratio up to 100. The tunable memory and transient features of these hybrid films are likely due to MQD charge trapping due to their quantum confinement and dissolvability of memristive components. The results suggest that MXene nanomaterials are promising as resistive switching trigger for emerging nonvolatile memories for data storage, specially data storage security.

中文翻译：

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具有可调电导率和电阻开关的MXene量子点/聚合物混合结构，用于非易失性存储设备

包括MXene量子点（MQD）和纳米片在内的低维MXene材料因其独特的结构和新颖的性能而引起了广泛的关注，但其最吸引人的功能仍然比预期的少。报告了对基于MQD的电子产品的记忆效应的系统研究。单分散MQD是通过一步一步简便的水热合成方法制备的。通过改变聚乙烯吡咯烷酮（PVP）混合复合膜中的MQD含量，可以精确地将氧化铟锡（ITO）/ MQD-PVP /金（Au）夹心结构的电导率从绝缘体性能调整为不可逆电阻切换，可逆电阻开关和导体行为。这些不可逆和可逆电阻开关分别具有一次写入多次读取时间（WORM）和闪存效应。两种类型的器件在保持测试下均能稳定运行，其开/关电流比高达100。该混合膜的可调存储和瞬态特性可能是由于其量子限制和忆阻成分的可溶性而导致的MQD电荷俘获。结果表明，MXene纳米材料有望成为新兴的用于数据存储的非易失性存储器（特别是数据存储安全性）的电阻切换触发器。这些杂化膜的可调谐存储和瞬态特性可能是由于其量子限制和忆阻成分的可溶性而导致的MQD电荷捕获。结果表明，MXene纳米材料有望成为新兴的用于数据存储的非易失性存储器（特别是数据存储安全性）的电阻切换触发器。这些杂化膜的可调谐存储和瞬态特性可能是由于其量子限制和忆阻成分的可溶性而导致的MQD电荷捕获。结果表明，MXene纳米材料有望成为新兴的用于数据存储的非易失性存储器（特别是数据存储安全性）的电阻切换触发器。