The defects in the ceria usually work as the active reaction sites in their industrial applications. In this article, we studied the formation and atomic process of the defects of ceria nanowires under heating by using in situ aberration-corrected transmission electron microscopy (Cs-TEM) method. With the temperature elevating, ceria nanowires are reduced and defects begin to appear and grow up. When temperature reaches 1,023 K, the defect morphology exhibits the rhombus or hexagon patterns, which are surrounded by {111} and {200} planes with lower surface energy, and the heated ceria still maintain the same cubic fluorite structure as their parent. It is also indicated that the formation of defects originates from the release of lattice oxygen and the volatilization of surface Ce ions. This work provides an important insight into designing ceria-based catalysts and ionic conductors.

中文翻译：

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原位像差校正TEM在加热下二氧化铈纳米线缺陷动力学的原子尺度成像

二氧化铈中的缺陷通常在其工业应用中充当活性反应位点。在本文中，我们通过原位研究了二氧化铈纳米线在加热条件下的缺陷的形成和原子过程。像差校正的透射电子显微镜（Cs-TEM）方法。随着温度升高，二氧化铈纳米线减少，缺陷开始出现并长大。当温度达到1,023 K时，缺陷形态表现出菱形或六边形图案，被具有较低表面能的{111}和{200}平面包围，并且加热的二氧化铈仍保持与其母体相同的立方萤石结构。还表明缺陷的形成源自晶格氧的释放和表面Ce离子的挥发。这项工作为设计基于二氧化铈的催化剂和离子导体提供了重要的见识。