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Dielectric and ferroelectric properties of BTFCO thin films
Journal of Electroceramics ( IF 1.7 ) Pub Date : 2019-11-07 , DOI: 10.1007/s10832-019-00189-0
David Coathup , Zheng Li , Xiaojing Zhu , Haixue Yan , Ruoying Zhang , Haitao Ye

Single phase Bi3.25La0.75Ti2.5Nb0.25Fe0.125Co0.125O12 (BTFCO) thin films were deposited on Pt/TiO2/SiO2/Si substrates by RF-magnetron sputtering. Ferroelectric domain switching, including 180° and non-180° domains walls, was observed in polarization- electrical field hysteresis loops. The coercive field Ec of the materials, linking with zero polarization, is near 100 kV/cm. Dielectric permittivity changing with DC electric field shows one permittivity peak near 50 kV/cm, which suggests that field induced switching of 180° domains is completed at 50 kV/cm. Further increasing the DC field causes the decrease of dielectric permittivity, which can be attributed to the decrease of density of 90° domain walls. The difference between the Ec and the field for permittivity peak show that the switching field of 180° domain is lower than that of 90° domains in BTFCO ferroelectric films.



中文翻译:

BTFCO薄膜的介电和铁电性能

通过RF磁控溅射在Pt / TiO 2 / SiO 2 / Si衬底上沉积单相Bi 3.25 La 0.75 Ti 2.5 Nb 0.25 Fe 0.125 Co 0.125 O 12(BTFCO)薄膜。在极化电场磁滞回线中观察到铁电畴切换,包括180°和非180°畴壁。矫顽场E c与零极化有关的材料中,有100%接近100 kV / cm。介电常数随直流电场的变化在50 kV / cm附近显示出一个介电常数峰,这表明在50 kV / cm处完成了磁场诱导的180°域转换。直流电场的进一步增加导致介电常数的降低,这可以归因于90°畴壁密度的降低。E c与介电常数峰值场之间的差异表明,在BTFCO铁电薄膜中,180°畴的开关场低于90°畴的开关场。

更新日期:2020-04-21
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