Single phase Bi_3.25La_0.75Ti_2.5Nb_0.25Fe_0.125Co_0.125O₁₂ (BTFCO) thin films were deposited on Pt/TiO₂/SiO₂/Si substrates by RF-magnetron sputtering. Ferroelectric domain switching, including 180° and non-180° domains walls, was observed in polarization- electrical field hysteresis loops. The coercive field E_c of the materials, linking with zero polarization, is near 100 kV/cm. Dielectric permittivity changing with DC electric field shows one permittivity peak near 50 kV/cm, which suggests that field induced switching of 180° domains is completed at 50 kV/cm. Further increasing the DC field causes the decrease of dielectric permittivity, which can be attributed to the decrease of density of 90° domain walls. The difference between the E_c and the field for permittivity peak show that the switching field of 180° domain is lower than that of 90° domains in BTFCO ferroelectric films.

通过RF磁控溅射在Pt / TiO ₂ / SiO ₂ / Si衬底上沉积单相Bi _3.25 La _0.75 Ti _2.5 Nb _0.25 Fe _0.125 Co _0.125 O ₁₂（BTFCO）薄膜。在极化电场磁滞回线中观察到铁电畴切换，包括180°和非180°畴壁。矫顽场E _c与零极化有关的材料中，有100％接近100 kV / cm。介电常数随直流电场的变化在50 kV / cm附近显示出一个介电常数峰，这表明在50 kV / cm处完成了磁场诱导的180°域转换。直流电场的进一步增加导致介电常数的降低，这可以归因于90°畴壁密度的降低。E _c与介电常数峰值场之间的差异表明，在BTFCO铁电薄膜中，180°畴的开关场低于90°畴的开关场。