Abstract Silver thin films have been formed by room temperature deposition of Ag on In/Si(111)- 3 × 3 . The Ag films have been investigated using both angle-resolved photoelectron spectroscopy (ARPES) and scanning tunneling microscopy and spectroscopy (STM/STS). This creates a powerful link between the electronic structures and the film morphology. The valence band spectra show a clear evidence of quantum well state (QWS) formation already for a 2 monolayer (ML) film. This QWS moves towards the Fermi level for the 3 ML film, which also reveals a second QWS. The QWSs’ dispersions have been plotted along the Γ ¯ M ¯ and Γ ¯ K ¯ symmetry lines of the 1×1 surface Brillouin zone (SBZ), where the Γ ¯ M ¯ direction shows the umklapp-mediated QWSs. The valence band spectra for the 3 ML Ag film also show a strong Ag sp band close to the edge of the Ag(111) 1×1 SBZ. In the STS spectrum from 2 ML, two peaks are visible below the Shockley surface state. These peaks are compared with the ARPES data and attributed to different features of the QWS, namely the turning part where the QWS band intersects with the bulk Si valence band region and the local binding energy minimum close to the Γ ¯ point.

中文翻译：

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In/Si(111)-3×3 表面 Ag 薄膜的初始量子阱态

摘要 银薄膜是通过在 In/Si(111)- 3 × 3 上室温沉积银形成的。已经使用角分辨光电子能谱 (ARPES) 和扫描隧道显微镜和光谱学 (STM/STS) 研究了银膜。这在电子结构和薄膜形态之间建立了强大的联系。价带光谱显示了 2 个单层 (ML) 膜已经形成量子阱态 (QWS) 的明确证据。该 QWS 向 3 ML 薄膜的费米能级移动，这也揭示了第二个 QWS。QWS 的色散已沿 1×1 表面布里渊区 (SBZ) 的 Γ¯ M¯ 和 Γ ¯ K 对称线绘制，其中 Γ ¯ M 方向显示了 umklapp 介导的 QWS。3 ML Ag 膜的价带光谱也显示出靠近 Ag(111) 1×1 SBZ 边缘的强 Ag sp 带。在 2 ML 的 STS 光谱中，在肖克利表面状态下方可以看到两个峰。这些峰值与 ARPES 数据进行比较，并归因于 QWS 的不同特征，即 QWS 带与体硅价带区域相交的转向部分和靠近 Γ 点的局部结合能最小值。