Light-induced anomalous Hall effect in graphene.,Nature Physics

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Light-induced anomalous Hall effect in graphene.
Nature Physics ( IF 17.6 ) Pub Date : 2019-11-04 , DOI: 10.1038/s41567-019-0698-y
J W McIver ₁ , B Schulte ₁ , F-U Stein ₁ , T Matsuyama ₁ , G Jotzu ₁ , G Meier ₁ , A Cavalleri _{1,

2}

Affiliation

Many non-equilibrium phenomena have been discovered or predicted in optically-driven quantum solids1. Examples include light-induced superconductivity2,3 and Floquet-engineered topological phases4-8. These are short lived effects that should lead to measurable changes in electrical transport, which can be characterized using an ultrafast device architecture based on photoconductive switches9. Here, we report the observation of a light-induced anomalous Hall effect in monolayer graphene driven by a femtosecond pulse of circularly polarized light. The dependence of the effect on a gate potential used to tune the Fermi level reveals multiple features that reflect a Floquet-engineered topological band structure4,5, similar to the band structure originally proposed by Haldane10. This includes an approximately 60 meV wide conductance plateau centered at the Dirac point, where a gap of equal magnitude is predicted to open. We find that when the Fermi level lies within this plateau, the estimated anomalous Hall conductance saturates around 1.8±0.4 e2/h.

中文翻译：

石墨烯中光诱导的异常霍尔效应。

在光学驱动的量子固体中已经发现或预测了许多非平衡现象。示例包括光诱导的超导性2,3和Floquet设计的拓扑阶段4-8。这些短暂的影响会导致电气传输发生可测量的变化，可以使用基于光电导开关的超快速设备架构来表征9。在这里，我们报告了由飞秒脉冲的圆偏振光驱动的单层石墨烯中光诱导的异常霍尔效应的观察结果。效应对用于调节费米能级的栅极电势的依赖性揭示了反映了Floquet设计的拓扑能带结构4、5的多个特征，类似于Haldane10最初提出的能带结构。这包括一个以狄拉克点为中心的约60 meV宽的电导平台，预计在该点处将打开等幅的缝隙。我们发现，当费米能级位于该平台范围内时，估计的霍尔电导异常饱和在1.8±0.4 e2 / h左右。

更新日期：2019-11-04

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