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Low‐Dielectric Constant and Low‐Temperature Curable Polyimide/POSS Nanocomposites
Macromolecular Materials and Engineering ( IF 4.2 ) Pub Date : 2019-10-14 , DOI: 10.1002/mame.201900505
Chao Huang 1, 2 , Jinhui Li 1 , Guangxia Xie 2 , Fei Han 1 , Dongxu Huang 1 , Fan Zhang 1 , Bo Zhang 1 , Guoping Zhang 1 , Rong Sun 1 , Ching‐Ping Wong 1, 3
Affiliation  

With the rapid development of ultra large scale integrated circuits, low stress, low thermal expansion, low dielectric constant, and low temperature curable (<250 °C) polyimides (PIs) with excellent mechanical, thermal properties are required. Unfortunately, high curing temperatures above 300 °C and limited dielectric property still remain to be solved. Herein, a new type of aminopropyl isobutyl polysilsesquioxane (POSS) with single vertex activity is introduced by in situ polymerization resulting in the PI‐POSS nanocomposites which exhibit a low dielectric constant (κ ≤ 2.6). Furthermore, low‐temperature curing at 200 °C (99.4% imidization) under the catalysis of quinoline is also achieved. The as‐prepared PI‐POSS nanocomposites also show excellent mechanical properties of which the tensile strength can reach up to 148 MPa and the elongation at break achieves 98%. Moreover, the temperature of weight loss 5% is as high as 550 °C and the glass transition temperature can also reach 349 °C. The as‐prepared PI‐POSS nanocomposites prove excellent electrical performance and mechanical properties, showing a huge market prospect of 5G chip packaging and millimeter wave antenna in the future.

中文翻译:

低介电常数和低温可固化聚酰亚胺/ POSS纳米复合材料

随着超大规模集成电路的迅速发展,需要具有优异的机械,热性能的低应力,低热膨胀,低介电常数和低温可固化(<250°C)聚酰亚胺(PI)。不幸的是,高于300°C的高固化温度和有限的介电性能仍然有待解决。本文中,通过原位聚合引入了一种具有单顶点活性的新型氨基丙基异丁基聚倍半硅氧烷(POSS),从而使PI-POSS纳米复合材料呈现出低介电常数(κ≤2.6)。此外,还可以在喹啉催化下于200°C(99.4%的酰亚胺化)进行低温固化。所制备的PI-POSS纳米复合材料还具有出色的机械性能,其拉伸强度可高达148 MPa,断裂伸长率可达到98%。此外,失重5%的温度高达550°C,玻璃化转变温度也可以达到349°C。所制备的PI-POSS纳米复合材料具有出色的电气性能和机械性能,显示了5G芯片封装和毫米波天线在未来的巨大市场前景。
更新日期:2019-12-05
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