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Growth of GaSb Crystal and Evaluation of Its Thermoelectric Properties Along (111) Plane
Crystal Research and Technology ( IF 1.169 ) Pub Date : 2019-10-25 , DOI: 10.1002/crat.201900156
Min Jin; Ziqi Tang; Rulin Zhang; Lina Zhou; Yuqi Chen; Su Zhao; Yunxia Chen; Xianghu Wang; Rongbin Li

In this study, group III–V compound semiconductor gallium antimonide (GaSb) crystal is grown by the vertical Bridgman technique. A (111) twinning is generated in the as‐grown crystal due to its polarity behavior as the GaSb crystal has a zinc‐blende structure. Hall effect measurements illustrate that the as‐grown GaSb crystal has n‐type semiconductor behavior among the whole temperature range, and the carrier concentration reaches the highest value of 3.27 × 1018 cm3 at 900 K. Thermoelectric behavior of GaSb crystals along the (111) plane is investigated. It shows the lowest electrical conductivity of 53.2 S cm−1 and the highest Seebeck coefficient of −470.0 µV K−1 at 700 K. However, the largest power factor of 13.7 µW cm K−2 takes place at 600 K. For thermal conductivity (k), the k value always decreases with increasing temperature, and the lowest k that occurred at around 900 K is about 7.44 W m−1 K−1. Finally, a maximum figure of merit of 0.082 is obtained at 700 K.
更新日期:2020-01-07

 

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