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Crystal Growth of Materials with the ThCr2Si2 Structure Type
Crystal Research and Technology ( IF 1.5 ) Pub Date : 2019-10-15 , DOI: 10.1002/crat.201900116
Kristin Kliemt 1 , Marius Peters 1 , Fabian Feldmann 1 , Alexej Kraiker 1 , Doan-My Tran 1 , Susanna Rongstock 1 , Johannes Hellwig 1 , Sebastian Witt 1 , Michael Bolte 2 , Cornelius Krellner 1
Affiliation  

The single crystal growth of 19 different intermetallic compounds within the LnT2X2 family (with Ln = lanthanides, T = Co, Ru, Rh, Ir, and X = Si, P) is presented, by employing a high‐temperature metal‐flux technique. The habitus of the obtained crystals is platelet‐like with the crystallographic c direction perpendicular to the surface and with individual masses between 1 and 100 mg. The magnetic properties of these crystals are characterized by magnetization, heat‐capacity, and resistivity measurements. These crystals form the materials basis for a thorough study of exciting surface properties by angle‐resolved photoemission spectroscopy.

中文翻译:

ThCr2Si2结构类型材料的晶体生长

通过使用高温金属-可以显示LnT 2 X 2族(Ln =镧系元素,T = Co,Ru,Rh,Ir和X = Si,P)中19种不同金属间化合物的单晶生长。助焊剂技术。所获得晶体的惯性为片状,其晶体学c方向垂直于表面,单个质量为1至100 mg。这些晶体的磁性能通过磁化强度,热容量和电阻率测量来表征。这些晶体构成了通过角分辨光发射光谱对激发表面性质进行全面研究的材料基础。
更新日期:2020-02-12
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