The kinetics of current at switching of the VO₂ based glass-ceramics samples from a state with high resistance (the off-state) to a state with low resistance (the on-state) and vice versa was studied. The delay of the transition from off-state to on-state, when a switching voltage U₀ is applied to a sample, is related to the time t_don required to heat a sample to the metal-semiconductor phase transition temperature in VO₂. The delay time t_don decreases with the increase of U₀. It is shown that the calculated dependence of t_don on the voltage U₀, obtained with the simplified heat balance equation of a sample and the “critical temperature” model, is in good conformity with the experimental data. It was found that the delay of reverse transition from the on-state to the off-state controls the conductive channel, within which the crystallites of VO₂ are in the metallic phase. The delay time t_doff of this transition determines the time during which, after turning off the voltage U₀, a conductive channel exists in a sample. The value of t_doff increases with the increase of U₀. The reason for this behavior is the expansion of conductive channel with the increase of U₀. As a consequence, takes place the increasing number of VO₂ crystallites in the metallic phase. Therefore, t_doff increases due to an increase in the time required for dissipation of the heat released during the transition of the VO₂ crystallites from the metallic phase to the semiconducting phase.

中文翻译：

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基于二氧化钒的玻璃陶瓷中的电流动力学

研究了基于VO ₂的玻璃陶瓷样品从高电阻状态（截止状态）切换到低电阻状态（导通状态）时的电流动力学，反之亦然。当向样品施加开关电压U ₀时，从截止状态到导通状态的转变延迟与将样品加热到VO _2中的金属-半导体相变温度所需的时间t _don有关。延迟时间t _don随着U ₀的增加而减小。结果表明，计算出的t _don对电压U _0的依赖性通过简化的样品热平衡方程和“临界温度”模型获得的，与实验数据非常吻合。发现从导通状态到截止状态的反向转变的延迟控制了导电通道，在该通道中VO ₂的微晶处于金属相。该转变的延迟时间t _doff确定在断开电压U ₀之后在样品中存在导电通道的时间。t _doff的值随U _0的增加而增加。出现这种现象的原因是，随着U ₀的增加，导电通道的膨胀。结果，发生了越来越多的VO金属相中有_2个微晶。因此，t _ffff由于在VO ₂晶体从金属相到半导体相的转变期间散发的热量散发所需的时间的增加而增加。