This work studies the influence of laser sintering on the semiconducting properties of La-doped BaTiO₃ (BTL) ceramics. The BTL powders were synthesized using a solid-state reaction method and sintered via a new laser sintering technique. In this technique, a CO₂ laser is used as the main heating source and no atmosphere control was employed. The BTL laser-sintered ceramics exhibited high relative density and a crack-free homogeneous microstructures after sintering at a laser power density of 5.0 W/mm² for 30 s. The samples exhibited a positive temperature coefficient of resistivity (PTCR) increase of two orders of magnitude, and a room-temperature resistivity of 10⁵ Ω.cm, even when sintered in an open atmosphere. X-ray diffraction, scanning electron microscopy, differential scanning calorimetry, and UV-Vis and impedance spectroscopy techniques were employed and results provided.

这项工作研究了激光烧结对掺La的BaTiO ₃（BTL）陶瓷的半导体性能的影响。使用固态反应方法合成了BTL粉末，并通过一种新的激光烧结技术对其进行了烧结。在该技术中，使用CO ₂激光器作为主要加热源，并且不采用气氛控制。BTL激光烧结陶瓷在以5.0 W / mm ²的激光功率密度烧结30 s后显示出较高的相对密度和无裂纹的均匀微观结构。样品的正电阻率温度系数（PTCR）增加了两个数量级，室温电阻率达到10 ⁵ Ω.cm，即使在露天气氛中烧结也是如此。使用了X射线衍射，扫描电子显微镜，差示扫描量热法，UV-Vis和阻抗谱技术，并提供了结果。