Abstract The heterojunction diode using Sn doped In6Se7 and CuInSe2 thin films are fabricated on FTO coated glass substrates using reactive evaporation technique. The structure of CuInSe2 film is studied using XRD analysis and the film exhibits polycrystalline nature. XPS result confirms that the prepared sample is nearly stoichiometric. The I–V measurements of FTO/n-In6Se7:Sn/p-CuInSe2/Ag heterojunction diode, in dark condition, shows rectification behavior. The knee voltage and ideality factor of the diode are observed to be 1.52 V, 3.09 V and 5.57, 16.16 respectively when the Sn dopant concentration varied from 0.47 at% to 1.57 at%. The absence of photoresponse from the diodes under illumination condition is explained using the energy band structure of the heterojunction.

中文翻译：

---

使用反应蒸发技术在 FTO 涂层玻璃基板上制造 n-In6Se7:Sn/p-CuInSe2 异质结二极管

摘要 使用反应蒸发技术在 FTO 涂层玻璃基板上制造了使用 Sn 掺杂的 In6Se7 和 CuInSe2 薄膜的异质结二极管。使用 XRD 分析研究了 CuInSe2 膜的结构，该膜表现出多晶性质。XPS 结果证实制备的样品接近化学计量。FTO/n-In6Se7:Sn/p-CuInSe2/Ag 异质结二极管在黑暗条件下的 I-V 测量显示出整流行为。当 Sn 掺杂剂浓度从 0.47 at% 变化到 1.57 at% 时，观察到二极管的拐点电压和理想因子分别为 1.52 V、3.09 V 和 5.57、16.16。使用异质结的能带结构解释了在照明条件下二极管没有光响应。