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UV Rewritable Hybrid Graphene/Phosphor p–n Junction Photodiode
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-11-08 , DOI: 10.1021/acsami.9b14461 Hao Li 1 , Shubin Su 1 , Chenhui Liang 1 , Ting Zhang 2 , Xuhong An 3 , Meizhen Huang 1 , Haihua Tao 1 , Xiang Ma 2 , Zhenhua Ni 3 , He Tian 2 , Xianfeng Chen 1
ACS Applied Materials & Interfaces ( IF 8.3 ) Pub Date : 2019-11-08 , DOI: 10.1021/acsami.9b14461 Hao Li 1 , Shubin Su 1 , Chenhui Liang 1 , Ting Zhang 2 , Xuhong An 3 , Meizhen Huang 1 , Haihua Tao 1 , Xiang Ma 2 , Zhenhua Ni 3 , He Tian 2 , Xianfeng Chen 1
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Graphene-based p–n junction photodiodes have a potential application prospect in photodetection due to their broadband spectral response, large operating bandwidth, and mechanical flexibility. Here, we report an ultraviolet (UV) rewritable p–n junction photodiode in a configuration of graphene coated with an amorphous phosphor of 4-bromo-1,8-naphthalic anhydride derivative polymer (poly-BrNpA). Under moderate UV irradiation, occurrence of photoisomerization reaction in the poly-BrNpA film leads to its drastically modified optical characteristics and a concurrent n-type doping in the underneath graphene. Meanwhile, the poly-BrNpA film, highly sensitive to water molecules, has a capability of restoring graphene to its initial p-type doping status by means of water adsorption. Based on these findings, a lateral graphene/poly-BrNpA p–n junction photodiode, responsive to visible light at the junction interface, can be written by UV irradiation and then erased via water adsorption. The p–n junction photodiode is rewritable upon such repetitive loops showing repeatable optoelectronic properties. This study provides a new scheme and perspective of making graphene-based rewritable p–n junction photodiodes in a flexible and controllable way, and it may contribute to expanding new families of optoelectronic devices based on two-dimensional materials.
中文翻译：
紫外线可重写杂化石墨烯/荧光体p–n结光电二极管
基于石墨烯的PN结光电二极管由于其宽带光谱响应，较大的工作带宽和机械灵活性而在光电检测中具有潜在的应用前景。在这里，我们报道了一种石墨烯构型的紫外（UV）可重写p-n结光电二极管，该石墨烯涂覆有4-溴-1,8-萘酐衍生物聚合物（poly-BrNpA）的无定形磷光体。在适度的紫外线照射下，聚BrNpA膜中发生光异构化反应会导致其光学特性发生大幅改变，并在石墨烯下方同时发生n型掺杂。同时，对水分子高度敏感的聚BrNpA膜具有通过吸水将石墨烯恢复到其初始p型掺杂状态的能力。根据这些发现，横向的石墨烯/聚BrNpA p–n结光电二极管可以响应结界面处的可见光，可以通过紫外线照射写入，然后通过吸水擦除。p–n结光电二极管在此类重复回路上可重写，显示出可重复的光电特性。这项研究为以灵活和可控的方式制造基于石墨烯的可重写p–n结光电二极管提供了新的方案和前景，它可能有助于扩展基于二维材料的新的光电器件系列。
更新日期：2019-11-11
中文翻译：
紫外线可重写杂化石墨烯/荧光体p–n结光电二极管
基于石墨烯的PN结光电二极管由于其宽带光谱响应，较大的工作带宽和机械灵活性而在光电检测中具有潜在的应用前景。在这里，我们报道了一种石墨烯构型的紫外（UV）可重写p-n结光电二极管，该石墨烯涂覆有4-溴-1,8-萘酐衍生物聚合物（poly-BrNpA）的无定形磷光体。在适度的紫外线照射下，聚BrNpA膜中发生光异构化反应会导致其光学特性发生大幅改变，并在石墨烯下方同时发生n型掺杂。同时，对水分子高度敏感的聚BrNpA膜具有通过吸水将石墨烯恢复到其初始p型掺杂状态的能力。根据这些发现，横向的石墨烯/聚BrNpA p–n结光电二极管可以响应结界面处的可见光，可以通过紫外线照射写入，然后通过吸水擦除。p–n结光电二极管在此类重复回路上可重写，显示出可重复的光电特性。这项研究为以灵活和可控的方式制造基于石墨烯的可重写p–n结光电二极管提供了新的方案和前景，它可能有助于扩展基于二维材料的新的光电器件系列。
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