Polycrystalline fluorine-doped SnO₂ (FTO) films have been deposited on glass substrate by ultrasonic spray pyrolysis at 500 °C. The effects of F/Sn atom ratio in precursor solution on the structural, optical and electrical properties of FTO films have been investigated. The XRD results indicate that all films consist of polycrystalline cassiterite tetragonal particles with obviously (2 0 0) preferred orientations. SEM images present that all the films consist of uniform, clear and sharp edge shaped pyramid particles. The film prepared with F/Sn = 1 in precursor solution possess the UV–vis transmittance about 70%, the lowest resistivity of 3.50 × 10⁻⁴ Ω·cm and the minimum value of [O_I]/[O_II] (oxygen atom at different condition determined by XPS) of 0.99 which can be contributed to the improved conductivity. In the room temperature photoluminescence (PL) spectra, there are four intense emission bands corresponding to defect of different oxygen vacancy states in FTO films.

多晶氟掺杂的SnO ₂（FTO）膜已通过超声喷雾热解在500°C的条件下沉积在玻璃基板上。研究了前驱体溶液中F / Sn原子比对FTO薄膜结构，光学和电学性质的影响。XRD结果表明，所有薄膜均由具有明显（2 0 0）优选取向的多晶锡石四方颗粒组成。SEM图像表明，所有膜均由均匀，清晰和尖锐的棱角金字塔形颗粒组成。与F / SN = 1的前体溶液制备的膜具有的紫外-可见光透射率约70％，3.50×10的电阻率最低^-4  Ω·cm且〔O的最小值_我] /〔O _II]（通过XPS确定的在不同条件下的氧原子）为0.99，这可以有助于提高电导率。在室温光致发光（PL）光谱中，存在四个对应于FTO薄膜中不同氧空位态缺陷的强发射带。