Low-fired Li₂Mg₃SnO₆ ceramics were fabricated via the conventional solid-state reaction route, and the effects of LiF-doping on their sintering mechanism and microwave dielectric properties were investigated. Sintering temperature of Li₂Mg₃SnO₆ ceramics were effectively reduced to 900 °C due to the substitution of F⁻ for O²⁻, which could cause weakening of oxygen bond strength induced reduced the intrinsic sintering temperature and facilitates the diffusion process. Low-fired ceramics inhibited volatilization of Li and improved relative density. Well-densified Li₂Mg₃SnO₆-4 wt% LiF ceramics were obtained with optimum microwave dielectric properties of ε_r = 12.3, Q × f = 96280 GHz and τ_f = −40.7 ppm/°C at 900 °C. Such samples were compatible with Ag electrodes and suitable for LTCC applications.

通过常规的固态反应路线制备了低烧Li ₂ Mg ₃ SnO ₆陶瓷，研究了LiF掺杂对其烧结机理和微波介电性能的影响。李的烧结温度₂的Mg ₃的SnO _6个陶瓷的有效地降低到900℃，由于F的取代^-代表O ^2-，这可能导致的氧键强度削弱感应减小本征的烧结温度，并促进扩散过程。低烧陶瓷抑制了锂的挥发并提高了相对密度。致密的Li ₂ Mg ₃ SnO₆ -4用的最佳微波介电性能得到重量％的LiF陶瓷ε _{- [R}  = 12.3，Q  ×  ˚F  = 96280 GHz和τ _˚F 在900℃= -40.7 PPM /℃。此类样品与银电极兼容，适用于LTCC应用。