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Scalable Synthesis of the Transparent Conductive Oxide SrVO3
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-10-23 , DOI: 10.1002/aelm.201900584 Lishai Shoham 1 , Maria Baskin 1 , Myung‐Geun Han 2 , Yimei Zhu 2 , Lior Kornblum 1
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-10-23 , DOI: 10.1002/aelm.201900584 Lishai Shoham 1 , Maria Baskin 1 , Myung‐Geun Han 2 , Yimei Zhu 2 , Lior Kornblum 1
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The correlated metal SrVO3 is an attractive earth‐abundant transparent conducting oxide (TCO), a critical component of many optoelectronic and renewable energy devices. A key challenge is to synthesize films with low resistivity, due to the prevalence of defects that cause electron scattering. In addition to the material's promise as a TCO, its interesting correlated‐electron physics is often obscured by a high defect concentration, which inhibits its further development into new types of devices. A route to synthesize low‐defect SrVO3 films by scalable, industry‐compatible molecular beam epitaxy (MBE) is demonstrated. The resulting films consistently exhibit a residual resistivity ratio in the excess of 10 and room temperature resistivity as low as 32 µΩ cm, an indication of their high quality and potential for applications. Analysis of the structural and electronic properties of SrVO3 films provides insights that are applicable to other conductive oxides, and highlights a route for further improvement in their quality and low temperature performance. MBE is the only growth method that allows atomically abrupt epitaxial interfaces between oxides and semiconductors such as Si and GaAs. Such interfaces are essential for efficient charge transport that is at the heart of the performance of most optoelectronic and solar devices.
中文翻译：
透明导电氧化物SrVO3的可扩展合成
相关金属SrVO 3是一种富有吸引力的地球透明导电氧化物（TCO），它是许多光电和可再生能源设备的重要组成部分。关键的挑战是合成低电阻率的薄膜，这是由于会引起电子散射的缺陷普遍存在。除了该材料有望成为TCO之外，其有趣的相关电子物理常常被高缺陷浓度所掩盖，这阻碍了其进一步发展为新型器件。合成低缺陷SrVO 3的途径通过可扩展的，行业兼容的分子束外延（MBE）来拍摄胶片。所得的薄膜始终显示出超过10的残余电阻率比和低至32 µΩ cm的室温电阻率，表明它们的高质量和应用潜力。对SrVO 3膜的结构和电子性能的分析提供了适用于其他导电氧化物的见解，并突出了进一步改善其质量和低温性能的途径。MBE是唯一一种允许氧化物与半导体（例如Si和GaAs）之间发生原子突然外延界面的生长方法。这种接口对于有效的电荷传输至关重要，而这是大多数光电和太阳能设备性能的核心。
更新日期：2020-01-13
中文翻译：
透明导电氧化物SrVO3的可扩展合成
相关金属SrVO 3是一种富有吸引力的地球透明导电氧化物（TCO），它是许多光电和可再生能源设备的重要组成部分。关键的挑战是合成低电阻率的薄膜，这是由于会引起电子散射的缺陷普遍存在。除了该材料有望成为TCO之外，其有趣的相关电子物理常常被高缺陷浓度所掩盖，这阻碍了其进一步发展为新型器件。合成低缺陷SrVO 3的途径通过可扩展的，行业兼容的分子束外延（MBE）来拍摄胶片。所得的薄膜始终显示出超过10的残余电阻率比和低至32 µΩ cm的室温电阻率，表明它们的高质量和应用潜力。对SrVO 3膜的结构和电子性能的分析提供了适用于其他导电氧化物的见解，并突出了进一步改善其质量和低温性能的途径。MBE是唯一一种允许氧化物与半导体（例如Si和GaAs）之间发生原子突然外延界面的生长方法。这种接口对于有效的电荷传输至关重要，而这是大多数光电和太阳能设备性能的核心。
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