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Spin‐Dependent Electronic Structure and Magnetic Anisotropy of 2D Ferromagnetic Janus Cr2I3X3 (X = Br, Cl) Monolayers
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2019-10-23 , DOI: 10.1002/aelm.201900778
Fang Zhang 1 , Wenbo Mi 1 , Xiaocha Wang 2
Affiliation  

Two‐dimensional (2D) Janus monolayers with mirror asymmetry have been found to possess extraordinary physical characteristics, meaning they could find applications in optoelectronic, electronic, and electromechanical devices. However, 2D Janus materials with intrinsic magnetism are rare. The electronic structure and magnetic properties of Janus Cr2I3X3 (X = Br, Cl) monolayers are investigated by first‐principles calculations. Janus Cr2I3X3 monolayers are an indirect band gap semiconductor with good stability, intrinsic ferromagnetism, and electric polarization. Cr2I3Br3 monolayer is a half semiconductor with perpendicular magnetic anisotropy (PMA), while Janus Cr2I3Cl3 monolayer is a bipolar magnetic semiconductor with in‐plane magnetic anisotropy (IMA). The band gap and Cr magnetic moment of Janus Cr2I3X3 monolayers can be tailored by biaxial strain. Additionally, a strain‐induced transition from half semiconductor to bipolar magnetic semiconductor, and reversal between PMA and IMA, appears in the Janus Cr2I3X3 monolayers. These results enrich the diversity of Janus 2D materials, which have potential applications in 2D spintronic devices.

中文翻译:

二维铁磁Janus Cr2I3X3(X = Br,Cl)单层的自旋相关电子结构和磁各向异性

已发现具有镜面不对称性的二维(2D)Janus单层具有非凡的物理特性,这意味着它们可以在光电,电子和机电设备中找到应用。但是,具有固有磁性的2D Janus材料很少。通过第一性原理计算研究了Janus Cr 2 I 3 X 3X = Br,Cl)单层的电子结构和磁性。Janus Cr 2 I 3 X 3单层是一种间接带隙半导体,具有良好的稳定性,固有的铁磁性和极化作用。铬2 I 3 Br 3单层是具有垂直磁各向异性(PMA)的半半导体,而Janus Cr 2 I 3 Cl 3单层是具有面内磁各向异性(IMA)的双极型磁性半导体。Janus Cr 2 I 3 X 3单层的带隙和Cr磁矩可以通过双轴应变来调整。此外,Janus Cr 2 I 3 X 3单层中出现了应变诱导的从半半导体到双极磁半导体的转变,以及PMA和IMA之间的逆转。这些结果丰富了Janus 2D材料的多样性,这些材料在2D自旋电子设备中具有潜在的应用。
更新日期:2020-01-13
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