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Light-Enhanced Ion Migration in Two-Dimensional Perovskite Single Crystals Revealed in Carbon Nanotubes/Two-Dimensional Perovskite Heterostructure and Its Photomemory Application
ACS Central Science ( IF 12.7 ) Pub Date : 2019-10-21 , DOI: 10.1021/acscentsci.9b00839
Yu-Tao Li 1 , Li Ding 2 , Jun-Ze Li 3 , Jun Kang 4 , De-Hui Li 3 , Li Ren 2 , Zhen-Yi Ju 1 , Meng-Xing Sun 1 , Jia-Qi Ma 3 , Ye Tian 1 , Guang-Yang Gou 1 , Dan Xie 1 , He Tian 1 , Yi Yang 1 , Lin-Wang Wang 4 , Lian-Mao Peng 2 , Tian-Ling Ren 1
Affiliation  

Two-dimensional (2D) hybrid perovskite sandwiched between two long-chain organic layers is an emerging class of low-cost semiconductor materials with unique optical properties and improved moisture stability. Unlike conventional semiconductors, ion migration in perovskite is a unique phenomenon possibly responsible for long carrier lifetime, current–voltage hysteresis, and low-frequency giant dielectric response. While there are many studies of ion migration in bulk hybrid perovskite, not much is known for its 2D counterparts, especially for ion migration induced by light excitation. Here, we construct an exfoliated 2D perovskite/carbon nanotube (CNT) heterostructure field effect transistor (FET), not only to demonstrate its potential in photomemory applications, but also to study the light induced ion migration mechanisms. We show that the FET IV characteristic curve can be regulated by light and shows two opposite trends under different CNT oxygen doping conditions. Our temperature-dependent study indicates that the change in the IV curve is probably caused by ion redistribution in the 2D hybrid perovskite. The first principle calculation shows the reduction of the migration barrier of I vacancy under light excitation. The device simulation shows that the increase of 2D hybrid perovskite dielectric constant (enabled by the increased ion migration) can change the IV curve in the trends observed experimentally. Finally, the so synthesized FET shows the multilevel photomemory function. Our work shows that not only we could understand the unique ion migration behavior in 2D hybrid perovskite, it might also be used for many future memory function related applications not realizable in traditional semiconductors.

中文翻译:

碳纳米管/二维钙钛矿异质结构揭示的二维钙钛矿单晶中的光增强离子迁移及其光记忆应用

夹在两个长链有机层之间的二维(2D)杂化钙钛矿是一类新兴的低成本半导体材料,具有独特的光学性能和改善的湿气稳定性。与常规半导体不同,钙钛矿中的离子迁移是一种独特的现象,可能会导致较长的载流子寿命,电流-电压磁滞和低频巨介电响应。尽管对大量混合钙钛矿中离子迁移的研究很多,但对于2D钙钛矿的离子迁移却知之甚少,特别是对于光激发引起的离子迁移。在这里,我们构建了剥落的2D钙钛矿/碳纳米管(CNT)异质结构场效应晶体管(FET),不仅证明了其在光存储应用中的潜力,而且还研究了光诱导的离子迁移机制。我们表明场效应管IV特性曲线可以通过光调节,并且在不同的CNT氧掺杂条件下显示出两个相反的趋势。我们依赖于温度的研究表明,在改变- V曲线可能是由在2D混合钙钛矿离子再分配引起的。第一原理计算表明在光激发下I空位的迁移势垒减小。器件仿真表明,二维杂化钙钛矿介电常数的增加(通过增加离子迁移来实现)可以改变IV实验观察到的趋势曲线。最后,如此合成的FET显示了多级光记忆功能。我们的工作表明,我们不仅可以理解2D混合钙钛矿中独特的离子迁移行为,而且还可以用于许多未来与存储功能相关的应用,而这些应用在传统半导体中是无法实现的。
更新日期:2019-11-28
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