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Optimizing the Performance of CsPbI3-Based Perovskite Solar Cells via Doping a ZnO Electron Transport Layer Coupled with Interface Engineering
Nano-Micro Letters ( IF 31.6 ) Pub Date : 2019-10-18 , DOI: 10.1007/s40820-019-0320-y
Man Yue 1 , Jie Su 1 , Peng Zhao 1 , Zhenhua Lin 1 , Jincheng Zhang 1 , Jingjing Chang 1 , Yue Hao 1
Affiliation  

  • Device simulations and first-principle calculations are employed to derive a guideline for the optimization of CsPbI3-based perovskite solar cells (PSCs).

  • The open voltage and power conversion efficiency of the PSCs are, respectively, improved to 1.31 V and 21.06% by simultaneously introducing an ultra-thin TiO2 buffer layer and increasing the doping concentration of the ZnO electron transport layer.

  • The influence of the interfacial buffer layer and doping of the CsPbI3/ZnO interface on PSC performance is discussed.



中文翻译:


通过掺杂 ZnO 电子传输层并结合界面工程优化 CsPbI3 基钙钛矿太阳能电池的性能



  • 采用器件模拟和第一原理计算得出 CsPbI 3基钙钛矿太阳能电池 (PSC) 优化指南。


  • 通过同时引入超薄TiO 2缓冲层和增加ZnO电子传输层的掺杂浓度,PSC的开路电压和功率转换效率分别提高至1.31 V和21.06%。


  • 讨论了界面缓冲层和CsPbI 3 /ZnO界面掺杂对PSC性能的影响。

更新日期:2019-10-18
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