Zero-index (ZI) materials are synthetic optical materials with a vanishing effective permittivity and/or permeability at a given design frequency. Recently, it has been shown that the permeability of a zero-index host material can be deterministically tuned by adding photonic dopants. Here, we apply metal-induced crystallization (MIC) in quasi-random metal–semiconductor composites to fabricate large-area zero-index materials. Using Ag–Si as a model system, we demonstrate that the localized crystallization of the semiconductor at the metal/semiconductor interface can be used as a design parameter to control light interaction in such a disordered system. The induced crystallization generates new zero-index states corresponding to a hybridized plasmonic mode emerging from selective coupling of light to the Ångstrom-sized crystalline shell of the semiconductor. Photonic doping can be used to enhance the transmission in these disordered metamaterials, as shown by simulations. Our results establish novel large-area zero-index materials for wafer-scale applications and beyond.

零折射率（ZI）材料是合成光学材料，在给定的设计频率下其有效介电常数和/或磁导率都消失了。最近，已经表明，可以通过添加光子掺杂剂来确定性地调节零折射率主体材料的磁导率。在这里，我们在准随机金属-半导体复合材料中应用金属诱导的结晶（MIC），以制造大面积零折射率材料。使用Ag-Si作为模型系统，我们证明了在金属/半导体界面处半导体的局部结晶可以用作控制这种无序系统中光相互作用的设计参数。诱导的结晶产生新的零折射率状态，该状态对应于从光选择性耦合到半导体的埃大小的晶体壳而出现的杂化等离子体模式。如仿真所示，光子掺杂可用于增强这些无序超材料中的传输。我们的结果建立了适用于晶圆级及其他应用的新型大面积零折射率材料。