Two-dimensional (2D) WS₂ offers great prospects for assembling next-generation optoelectronic and electronic devices due to its thickness-dependent optical and electronic properties. However, layer-number-controlled growth of WS₂ is still a challenge up to now. This work presents controlled growth of bilayer WS₂ triangular flakes by carbon-nanoparticle-assisted chemical vapor deposition (CVD) process. The growth mechanism is also proposed. In addition, the field effect transistors (FETs) based on monolayer and bilayer WS₂ are also fabricated and investigated. The bilayer FET displays a mobility of 34 cm²·V^-1·s^-1, much higher than that of the monolayer FET. The high figures of merit make bilayer WS₂ a promising candidate in high-performance electronics and optoelectronics.

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二维（2D）WS ₂由于其与厚度有关的光学和电子特性，因此为组装下一代光电和电子设备提供了广阔的前景。但是，到目前为止，WS ₂的层数控制增长仍然是一个挑战。这项工作提出了通过碳纳米粒子辅助化学气相沉积（CVD）工艺控制双层WS ₂三角形薄片的生长。还提出了增长机制。另外，还制造并研究了基于单层和双层WS _2的场效应晶体管（FET）。双层FET的迁移率为34 cm ² ·V ^-1 ·s ^-1，比单层FET高得多。高品质的优点使双层WS ₂成为高性能电子和光电子领域的有前途的候选产品。

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