Graphene and hexagonal boron nitride (h-BN), as typical two-dimensional (2D) materials, have long attracted substantial attention due to their unique properties and promise in a wide range of applications. Although they have a rather large difference in their intrinsic bandgaps, they share a very similar atomic lattice; thus, there is great potential in constructing heterostructures by lateral stitching. Herein, we present the in situ growth of graphene and h-BN lateral heterostructures with tunable morphologies that range from a regular hexagon to highly symmetrical star-like structure on the surface of liquid Cu. The chemical vapor deposition (CVD) method is used, where the growth of the h-BN is demonstrated to be highly templated by the graphene. Furthermore, large-area production of lateral G-h-BN heterostructures at the centimeter scale with uniform orientation is realized by precisely tuning the CVD conditions. We found that the growth of h-BN is determined by the initial graphene and symmetrical features are produced that demonstrate heteroepitaxy. Simulations based on the phase field and density functional theories are carried out to elucidate the growth processes of G-h-BN flakes with various morphologies, and they have a striking consistency with experimental observations. The growth of a lateral G-h-BN heterostructure and an understanding of the growth mechanism can accelerate the construction of various heterostructures based on 2D materials.

作为典型的二维（2D）材料，石墨烯和六方氮化硼（h-BN）由于其独特的性能并有望在广泛的应用中长期受到关注。尽管它们的固有带隙差异很大，但是它们共享非常相似的原子晶格。因此，通过横向缝合来构造异质结构具有很大的潜力。在这里，我们介绍了在液态铜表面上石墨烯和h-BN横向异质结构的原位生长，其可调谐形态从正六边形到高度对称的星形结构不等。使用化学气相沉积（CVD）方法，其中h-BN的生长被证明是石墨烯高度模板化的。此外，通过精确地调整CVD条件，可以在大范围内以均匀的取向大面积生产Gh-BN横向异质结构。我们发现，h-BN的生长是由初始石墨烯决定的，并且对称特征可以证明其具有异质外延性。进行了基于相场和密度泛函理论的模拟，以阐明各种形态的Gh-BN薄片的生长过程，并且与实验观察结果具有惊人的一致性。横向Gh-BN异质结构的生长以及对生长机理的理解可以加速基于2D材料的各种异质结构的构建。我们发现，h-BN的生长是由初始石墨烯决定的，并且对称特征可以证明其具有异质外延性。进行了基于相场和密度泛函理论的模拟，以阐明各种形态的Gh-BN薄片的生长过程，并且与实验观察结果具有惊人的一致性。横向Gh-BN异质结构的生长以及对生长机理的理解可以加速基于2D材料的各种异质结构的构建。我们发现，h-BN的生长是由初始石墨烯决定的，并且对称特征可以证明具有异质外延性。进行了基于相场和密度泛函理论的模拟，以阐明各种形态的Gh-BN薄片的生长过程，并且与实验观察结果具有惊人的一致性。横向Gh-BN异质结构的生长以及对生长机理的理解可以加速基于2D材料的各种异质结构的构建。