Controlled Growth of Single-Crystal Graphene Films.,Advanced Materials

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Controlled Growth of Single-Crystal Graphene Films.
Advanced Materials ( IF 27.4 ) Pub Date : 2019-10-03 , DOI: 10.1002/adma.201903266
Jincan Zhang _{1,

2} , Li Lin ₁ , Kaicheng Jia ₁ , Luzhao Sun _{1,

2} , Hailin Peng _{1,

3} , Zhongfan Liu _{1,

3}

Affiliation

Grain boundaries produced during material synthesis affect both the intrinsic properties of materials and their potential for high-end applications. This effect is commonly observed in graphene film grown using chemical vapor deposition and therefore caused intense interest in controlled growth of grain-boundary-free graphene single crystals in the past ten years. The main methods for enlarging graphene domain size and reducing graphene grain boundary density are classified into single-seed and multiseed approaches, wherein reduction of nucleation density and alignment of nucleation orientation are respectively realized in the nucleation stage. On this basis, detailed synthesis strategies, corresponding mechanisms, and key parameters in the representative methods of these two approaches are separately reviewed, with the aim of providing comprehensive knowledge and a snapshot of the latest status of controlled growth of single-crystal graphene films. Finally, perspectives on opportunities and challenges in synthesizing large-area single-crystal graphene films are discussed.

中文翻译：

单晶石墨烯薄膜的受控生长。

在材料合成过程中产生的晶界会影响材料的固有特性及其在高端应用中的潜力。通常在使用化学气相沉积法生长的石墨烯薄膜中观察到这种效应，因此在过去十年中引起了人们对控制无晶界的石墨烯单晶生长的浓厚兴趣。扩大石墨烯畴尺寸和降低石墨烯晶界密度的主要方法分为单种和多种方法，其中在成核阶段分别实现成核密度的降低和成核取向的对准。在此基础上，分别回顾了这两种方法的代表性方法中的详细合成策略，相应的机制和关键参数，目的是提供全面的知识并概述单晶石墨烯薄膜可控生长的最新状态。最后，讨论了合成大面积单晶石墨烯薄膜的机遇与挑战。

更新日期：2020-01-07

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