Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors,ACS Applied Electronic Materials

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Nonvolatile Memory Action Due to Hot-Carrier Charge Injection in Graphene-on-Parylene Transistors
ACS Applied Electronic Materials ( IF 4.3 ) Pub Date : 2019-10-22 , DOI: 10.1021/acsaelm.9b00467
Shenchu Yin , Jan G. Gluschke ₁ , Adam P. Micolich ₁ , Jubin Nathawat , Bilal Barut , Ripudaman Dixit , Nargess Arabchigavkani , Keke He , Michael Randle , Chun-Pui Kwan , Jonathan P. Bird

Affiliation

We fabricated graphene field-effect transistors (GFETs) with hybrid organic/inorganic gate dielectrics, in which parylene C is used as the organic component. The HOMO–LUMO gap of parylene is large enough to provide effective gate insulation, yet significantly smaller than that of the inorganic component (SiO₂) of the dielectric. This allows this polymeric material to serve as an effective “floating node” that may be programmed by applying large voltage pulses to the GFET drain. We identify the role of two types of trapping in these devices: the first is mediated by short-lived interfacial states at the graphene–parylene interface, while the second, which is responsible for the nonvolatile memory function, involves hot-carrier injection into long-lived trap states deep in the parylene layer. Retention measurements demonstrate that charge injected into the parylene interior may be retained over long decay times (months), thereby confirming the potential of graphene-on-parylene for nonvolatile memory implementations.

中文翻译：

石墨烯/对-对二甲苯晶体管中的热载流子注入导致的非易失性存储作用

我们制造了具有混合有机/无机栅极电介质的石墨烯场效应晶体管（GFET），其中聚对二甲苯C被用作有机成分。聚对二甲苯的HOMO-LUMO间隙足够大，可以提供有效的栅极绝缘，但比无机组分（SiO ₂）的电介质。这使这种聚合材料可以用作有效的“浮动节点”，可以通过向GFET漏极施加大电压脉冲来对其进行编程。我们确定了两种类型的陷阱在这些设备中的作用：第一种是由石墨烯-聚对二甲苯界面的短时界面状态介导的，第二种是负责非易失性存储功能的，涉及将热载流子注入活的陷阱状态位于聚对二甲苯层的深处。保留测量结果表明，注入到聚对二甲苯内部的电荷可能会在较长的衰减时间（数月）内保留，从而证实了聚对二甲苯上的石墨烯在非易失性存储实现中的潜力。

更新日期：2019-10-23

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