Abstract By controlling the polarization direction of BaTiO3 (BTO) layer, the nonvolatile and reversible resistive switching behavior of the BaTiO3/La0.7Sr0.3MnO3 (BTO/LSMO) layered heterostructure have been observed. Pulsed laser deposition (PLD) technique was used to prepare it on the (0 0 1) oriented single-crystal SrTiO3 (STO) substrate, and its magnetic and electric properties were studied. Moreover, the change of the resistivity and metal–insulator transition temperature (TMI) for the LSMO layer were found to be induced by the switching of the electric field direction. The resistivity is decreased while the TMI is increased for the accumulation state of hole carriers when a negative electric field is applied to the BTO layer. By contrast, the resistivity is increased while the TMI is decreased for the depletion state of hole carriers when a positive electric field is applied to the BTO layer. This result indicates a nonvolatile and reversible resistive switching behavior in the multiferroic heterostructure control through the external electric field on ferroelectric layer, which provides a platform to develop unique electronic devices, such as nonvolatile random-access memories, sensors and memristive devices, etc.

中文翻译：

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外电场驱动下 BaTiO3/La0.7Sr0.3MnO3 层状异质结构的电阻开关行为

摘要 通过控制 BaTiO3 (BTO) 层的极化方向，观察了 BaTiO3/La0.7Sr0.3MnO3 (BTO/LSMO) 层状异质结构的非易失性和可逆电阻转换行为。采用脉冲激光沉积（PLD）技术在（0 0 1）取向的单晶SrTiO3（STO）衬底上制备了它，并研究了其磁电性能。此外，发现 LSMO 层的电阻率和金属 - 绝缘体转变温度（TMI）的变化是由电场方向的切换引起的。当负电场施加到 BTO 层时，对于空穴载流子的积累状态，电阻率降低，而 TMI 增加。相比之下，当正电场施加到 BTO 层时，由于空穴载流子的耗尽状态，电阻率增加，而 TMI 降低。该结果表明通过铁电层上的外部电场控制多铁异质结构中的非易失性和可逆电阻切换行为，这为开发独特的电子器件提供了平台，如非易失性随机存取存储器、传感器和忆阻器件等。