Molybdenum Disulfide Nanosheet/Quantum Dot Dynamic Memristive Structure Driven by Photoinduced Phase Transition.,Small

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Molybdenum Disulfide Nanosheet/Quantum Dot Dynamic Memristive Structure Driven by Photoinduced Phase Transition.
Small ( IF 13.0 ) Pub Date : 2019-09-20 , DOI: 10.1002/smll.201903809
Xiao Fu ₁ , Lei Zhang ₂ , Hak D Cho ₁ , Tae Won Kang ₁ , Dejun Fu ₃ , Dongjin Lee ₁ , Sang Wuk Lee ₁ , Luying Li ₄ , Tianyu Qi ₄ , Abdul S Chan ₅ , Ziyodbek A Yunusov ₁ , Gennady N Panin _{1,

6}

Affiliation

MoS2 2D nanosheets (NS) with intercalated 0D quantum dots (QDs) represent promising structures for creating low-dimensional (LD) resistive memory devices. Nonvolatile memristors based 2D materials demonstrate low power consumption and ultrahigh density. Here, the observation of a photoinduced phase transition in the 2D NS/0D QDs MoS2 structure providing dynamic resistive memory is reported. The resistive switching of the MoS2 NS/QD structure is observed in an electric field and can be controlled through local QD excitations. Photoexcitation of the LD structure at different laser power densities leads to a reversible MoS2 2H-1T phase transition and demonstrates the potential of the LD structure for implementing a new dynamic ultrafast photoresistive memory. The dynamic LD photomemristive structure is attractive for real-time pattern recognition and photoconfiguration of artificial neural networks in a wide spectral range of sensitivity provided by QDs.

中文翻译：

光诱导相变驱动的二硫化钼纳米片/量子点动态忆阻结构。

具有插入的0D量子点（QD）的MoS2 2D纳米片（NS）代表了用于创建低维（LD）电阻存储器件的有前途的结构。基于非易失性忆阻器的2D材料显示出低功耗和超高密度。在此，报告了在提供动态电阻记忆的2D NS / 0D QDs MoS2结构中发生光诱导的相变的观察。MoS2 NS / QD结构的电阻切换可在电场中观察到，并且可以通过局部QD激励进行控制。LD结构在不同激光功率密度下的光激发导致可逆的MoS2 2H-1T相变，并证明了LD结构在实现新的动态超快光阻性存储方面的潜力。

更新日期：2019-11-06

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