Abstract In this letter, we report an unusual crossover in the current-voltage characteristics of forming-free titanium oxide-based memory bits. The voltage at which crossover between high and low resistance states take place, Vcr gradually shifts to lower bias values with either decreasing sweeping rates, increasing maximum scan voltage or increasing current compliance. Interestingly, the crossover effect is not pronounced for reduced-oxide based memory bits. The mechanism behind these changes in the I-V curves is discussed.

中文翻译：

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缺氧钛氧化物存储位中电场控制的交叉效应

摘要 在这封信中，我们报告了基于无成型氧化钛的存储位的电流-电压特性的异常交叉。高电阻状态和低电阻状态之间发生交叉的电压，Vcr 随着扫描速率的降低、最大扫描电压的增加或电流顺应性的增加而逐渐转变为较低的偏置值。有趣的是，基于氧化物减少的存储器位的交叉效应并不明显。讨论了 IV 曲线中这些变化背后的机制。