The electrical properties such as interface energy barriers, defect energy levels, and densities dictate the performance of thin film solar cells. Here, we show that these properties can be quantified in cadmium telluride (CdTe) thin‐film solar cells using admittance spectroscopy‐based techniques. Our results reveal that the electrical properties in CdTe thin‐film solar cells depend on both buffer material and the fabrication atmosphere. We find that only a negligible front contact barrier exists at the CdS/CdTe front junction regardless of the fabrication atmospheres, while an obvious front barriers are observed at the ZnMgO (ZMO)/CdTe junctions. Both CdS/CdTe and ZMO/CdTe solar cells exhibit back contact barrier. The energy level of defects is shallower in CdS/CdTe cells than in ZMO/CdTe cells. The fabrication atmosphere influences the electrical properties, i.e., an oxygen‐free atmosphere reduces the front and back barrier heights and lowers the energy level of defects. The results provide critical insights for understanding and optimizing the performance of CdTe thin‐film solar cells.

中文翻译：

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缓冲材料和制造气氛对CdTe太阳能电池电性能的影响

诸如界面能垒，缺陷能级和密度的电特性决定了薄膜太阳能电池的性能。在这里，我们表明可以使用基于导纳光谱的技术在碲化镉（CdTe）薄膜太阳能电池中量化这些特性。我们的结果表明，CdTe薄膜太阳能电池的电性能取决于缓冲材料和制造气氛。我们发现，无论制造气氛如何，在CdS / CdTe前结处仅存在可忽略的前接触势垒，而在ZnMgO（ZMO）/ CdTe结处观察到了明显的前势垒。CdS / CdTe和ZMO / CdTe太阳能电池均具有背接触势垒。CdS / CdTe电池的缺陷能级比ZMO / CdTe电池的缺陷能级低。制造气氛会影响电性能，即无氧气氛会降低前后势垒高度并降低缺陷的能级。结果为理解和优化CdTe薄膜太阳能电池的性能提供了重要的见解。