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Potential of very thin and high‐efficiency silicon heterojunction solar cells
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2019-08-08 , DOI: 10.1002/pip.3181 Hitoshi Sai 1 , Toshiki Oku 1 , Yoshiki Sato 1 , Mayumi Tanabe 1 , Takuya Matsui 1 , Koji Matsubara 1
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2019-08-08 , DOI: 10.1002/pip.3181 Hitoshi Sai 1 , Toshiki Oku 1 , Yoshiki Sato 1 , Mayumi Tanabe 1 , Takuya Matsui 1 , Koji Matsubara 1
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Thin crystalline silicon (c‐Si) solar cells are highly attractive for realizing light‐weight and flexible wafer‐based solar cells as well as for reducing the material cost. Silicon heterojunction (SHJ) architecture using hydrogenated amorphous silicon (a‐Si:H) is suitable for realizing very thin c‐Si cells, because of its capability of excellent surface passivation. In this work, the potential of very thin c‐Si solar cells is examined by characterizing SHJ solar cells with a wide range of thicknesses from 50 to 400 μm. A trade‐off between the open‐circuit voltage (VOC) and the short circuit current density (JSC) against wafer thickness is clearly observed in these SHJ cells, whereas a decrease in fill factor (FF) is found for thin SHJ cells below 80 μm. The loss analysis for the thin SHJ cells with numerical simulation clarifies that the infrared parasitic absorption loss due to the supporting layers is enhanced for thinner wafers, which limits the JSC in the thin SHJ cells. In addition, it is confirmed that the FF is more sensitive to surface recombination than the VOC, and this tendency becomes more pronounced with the decrease in the wafer thickness. A high efficiency of 22% is achieved in a SHJ solar cell with a thickness of only 46 μm, demonstrating a high potential for flexible high‐efficiency c‐Si solar cells.
中文翻译：
极薄且高效的硅异质结太阳能电池的潜力
薄晶硅（c-Si）太阳能电池对于实现基于轻质和柔性晶片的太阳能电池以及降低材料成本具有很高的吸引力。使用氢化非晶硅（a-Si：H）的硅异质结（SHJ）体系结构适合实现非常薄的c-Si电池，因为它具有出色的表面钝化能力。在这项工作中，通过表征厚度范围从50到400μm的SHJ太阳能电池，来检查非常薄的c-Si太阳能电池的潜力。在开路电压（V OC）和短路电流密度（J SC在这些SHJ电池中可以清楚地看到）相对于晶片厚度的变化，而对于80μm以下的薄型SHJ电池，填充系数（FF）却有所降低。通过数值模拟对薄型SHJ电池进行损耗分析，结果表明，对于较薄的晶片，由于支撑层引起的红外寄生吸收损耗得到了增强，这限制了薄型SHJ电池中的J SC。另外，可以确认，在FF是表面复合比在V更敏感OC，并且这种趋势变得更加与在晶片厚度的减小明显。厚度仅为46μm的SHJ太阳能电池可实现22％的高效率，这表明柔性高效c-Si太阳能电池具有很高的潜力。
更新日期：2019-08-08
中文翻译：
极薄且高效的硅异质结太阳能电池的潜力
薄晶硅（c-Si）太阳能电池对于实现基于轻质和柔性晶片的太阳能电池以及降低材料成本具有很高的吸引力。使用氢化非晶硅（a-Si：H）的硅异质结（SHJ）体系结构适合实现非常薄的c-Si电池，因为它具有出色的表面钝化能力。在这项工作中，通过表征厚度范围从50到400μm的SHJ太阳能电池，来检查非常薄的c-Si太阳能电池的潜力。在开路电压（V OC）和短路电流密度（J SC在这些SHJ电池中可以清楚地看到）相对于晶片厚度的变化，而对于80μm以下的薄型SHJ电池，填充系数（FF）却有所降低。通过数值模拟对薄型SHJ电池进行损耗分析，结果表明，对于较薄的晶片，由于支撑层引起的红外寄生吸收损耗得到了增强，这限制了薄型SHJ电池中的J SC。另外，可以确认，在FF是表面复合比在V更敏感OC，并且这种趋势变得更加与在晶片厚度的减小明显。厚度仅为46μm的SHJ太阳能电池可实现22％的高效率，这表明柔性高效c-Si太阳能电池具有很高的潜力。
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