Conventional film-structured polycrystalline semiconductor devices suffer from grain boundary scattering, which is responsible for low mobility and can even mask intrinsic transport properties. In this work, we show that devices containing only a ZnO single particle can exhibit mobility values one order higher than that of single-crystal nanowires. The ZnO nanoparticle was embedded inside a nanopore structure, surrounded by a gate electrode and connected to top and bottom electrodes. Due to the absence of inter-grain scattering and long traveling distance, we obtained relatively high mobility values of around 600 cm² V⁻¹ s⁻¹ at room temperature (300 K) and about 1100 cm² V⁻¹ s⁻¹ at low temperature (∼180 K). The devices also presented external quantum efficiency of 5.6 × 10⁷, responsivity of 1.39 × 10⁶ AW⁻¹, detectivity of 8.69 × 10¹² Jones, and a record-high photoresponse rise time of 90 μs. This single nanoparticle-based device could be an excellent candidate of phototransistors with high performances.

中文翻译：

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基于单个ZnO纳米粒子的卓越光电晶体管，具有高迁移率和超快响应时间†

常规的膜结构的多晶半导体器件遭受晶界散射，这造成了低迁移率，甚至可能掩盖了固有的传输特性。在这项工作中，我们表明仅包含ZnO单颗粒的器件可以显示出比单晶纳米线高一个数量级的迁移率值。ZnO纳米颗粒嵌入纳米孔结构内部，被栅电极围绕并连接到顶部和底部电极。由于没有晶粒间散射和长距离移动，我们在室温（300 K）下获得了大约600 cm ² V ^-1 s ^-1的相对较高的迁移率值，在1100 cm ² V ^-1 s ^-1的情况下获得了较高的迁移率值在低温下（〜180 K）。这些器件还具有5.6×10 ^7的外部量子效率，1.39×10 ⁶ AW ^-1的响应度，8.69×10 ¹² Jones的检测率以及90μs的创纪录的高光响应上升时间。这种基于纳米粒子的器件可能是具有高性能的光电晶体管的极佳候选者。