Direct observation of hydrogen at defects in multicrystalline silicon,Progress in Photovoltaics

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Direct observation of hydrogen at defects in multicrystalline silicon
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2019-08-07 , DOI: 10.1002/pip.3184
David Tweddle ₁ , Phillip Hamer _{1,

2} , Zhao Shen ₁ , Vladimir P. Markevich ₃ , Michael P. Moody ₁ , Peter R. Wilshaw ₁

Affiliation

Hydrogen passivation is a key industrial technique used to reduce the recombination activity of defects in multicrystalline silicon (mc-Si). However, not all dislocations and grain boundaries respond well to traditional hydrogen passivation techniques. In order to understand the reasons for these different behaviours, and how superior passivation might be achieved, a method is required for the direct observation of hydrogen at these defects. Here, we present a novel characterisation technique based on a combination of transmission Kikuchi diffraction (TKD), atom probe tomography (APT), and isotopic substitution that enables unambiguous detection and quantification of hydrogen atoms present at crystallographic defects in mc-Si.

中文翻译：

直接观察多晶硅缺陷处的氢

氢钝化是一项关键的工业技术，用于降低多晶硅 (mc-Si) 中缺陷的复合活性。然而，并不是所有的位错和晶界都能很好地响应传统的氢钝化技术。为了了解这些不同行为的原因，以及如何实现卓越的钝化，需要一种方法来直接观察这些缺陷处的氢。在这里，我们提出了一种基于透射菊池衍射 (TKD)、原子探针断层扫描 (APT) 和同位素置换相结合的新型表征技术，该技术能够明确检测和量化 mc-Si 晶体缺陷处存在的氢原子。

更新日期：2019-08-07

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