Continuously downscaling integrated circuit devices requires fabrication of shallower p‐n junctions. The ion implantation approach at low energy is subject to low beam current due to the Coulomb repulsion. To overcome this problem cluster ions can be used for implantation. In comparison with single ions, cluster ions possess lower energy per atom and reduced Coulomb repulsion resulting in high equivalent current.

中文翻译：

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小铝团簇离子注入Si和4H-SiC中

不断缩小规模的集成电路器件需要制造更浅的p-n结。由于库仑斥力，低能离子注入方法会受到低束流的影响。为了克服这个问题，簇离子可以用于注入。与单离子相比，簇离子每个原子具有较低的能量，并且库仑排斥力降低，从而导致较高的等效电流。