Among two-dimensional layered semiconductors, indium selenide (InSe) is one of the most promising materials with absolute advantages in field-effect transistors (FETs) because of its high electron mobility and stable material properties. Some work has been performed to improve the mobility of InSe FETs. However, in practical applications, electrical stability of FETs is another essential factor to guarantee the performance of the electronic system. Here, we show a highly stable InSe FET with a field-effect mobility of 1200 cm²/V·s in the practical working regime. The bottom-gate staggered InSe FET was fabricated with a polymethyl methacrylate (PMMA)/HfO₂ dual-layer gate dielectric and PMMA back-channel encapsulation. The hysteresis was maintained at 0.4 V after 30 days of storage under normal ambient conditions, and the threshold voltage shift was retained at 0.6 V with a gate stress V_GS of 10 V, which represents the best electrical stability reported to date. Its high mobility and electrical stability enable reliable detection of the weak nerve action potential at a low power consumption. High-performance InSe FETs expand their promising applications in flexible and in situ real-time intelligent nerve action potential recording.

在二维分层半导体中，硒化铟（InSe）是最有前途的材料之一，因为它具有高电子迁移率和稳定的材料性能，因此在场效应晶体管（FET）中具有绝对优势。已经进行了一些工作来提高InSe FET的迁移率。但是，在实际应用中，FET的电稳定性是保证电子系统性能的另一个重要因素。在这里，我们展示了一个高度稳定的InSe FET，在实际工作条件下的场效应迁移率为1200 cm ² / V·s。底栅交错式InSe FET由聚甲基丙烯酸甲酯（PMMA）/ HfO ₂制成双层栅极电介质和PMMA反向通道封装。在正常环境条件下存储30天后，磁滞保持在0.4 V，并且门极电压V _GS为10 V时，阈值电压漂移保持在0.6 V，这是迄今为止报道的最佳电稳定性。它的高迁移率和电稳定性使它能够以低功耗可靠地检测到弱神经动作电位。高性能InSe FET扩展了其在灵活和现场实时智能神经动作电位记录中的有前途的应用。