The combination of monolayers of different two-dimensional (2D) materials into van der Waals hetero-bilayer structures creates unprecedented physical phenomena, acting as a powerful tool for future devices. Understanding and exploiting these phenomena hinge on knowing the electronic structure and the hybridization of hetero-bilayer structures. Here, we show strong hybridization effects arising between the constitutive single layers of a SnS₂/WSe₂ hetero-bilayer structure grown by chemical vapor deposition. Surprisingly, the valence band maximum position of WSe₂ is moved from the K point for the single layer WSe₂ to the Γ point for the aligned SnS₂/WSe₂ hetero-bilayer. Additionally, a significant photoluminescence quenching is observed for the SnS₂/WSe₂ hetero-bilayer structure with respect to the WSe₂ monolayer. Using photoluminescence spectroscopy and nano-angle-resolved photoemission spectroscopy techniques, we demonstrate that the SnS₂/WSe₂ heterostructure present a type-II band alignment. These findings directly answer many outstanding questions about the electronic band structure and the band offset of SnS₂/WSe₂ hetero-bilayers for envisaging their applications in nanoelectronics.

将不同的二维（2D）材料的单层组合到van der Waals异质双层结构中，将创造出前所未有的物理现象，成为未来设备的强大工具。了解和利用这些现象取决于了解电子结构和异质双层结构的杂化。在这里，我们显示了通过化学气相沉积生长的SnS ₂ / WSe ₂异质双层结构的单层结构之间产生的强大杂交效应。令人惊讶地，WSE的价带最大值位置₂是从K个点的单层移动WSE ₂到Γ点对准的SnS ₂ / WSE ₂异质双层。另外，相对于WSe ₂单层，对于SnS ₂ / WSe ₂异质双层结构观察到明显的光致发光猝灭。使用光致发光光谱学和纳米角度分辨的光发射光谱学技术，我们证明了SnS ₂ / WSe ₂异质结构呈现II型能带排列。这些发现直接回答了有关SnS ₂ / WSe ₂异质双层的电子能带结构和能带偏移的许多悬而未决的问题，以用于其在纳米电子学中的应用。