We report on the fabrication and characteristics of an individually addressable gallium nitride (GaN) microdisk light-emitting diode (LED) array in free-standing and ultrathin form. A high-quality GaN microdisk array with n-GaN, InGaN/GaN quantum wells and p-GaN layers was epitaxially grown on graphene microdots patterned on SiO₂/Si substrates. Due to the weak attachment of the graphene microdots to the growth substrate, a microdisk array coated with a polyimide layer was easily separated from the substrate using mechanical or chemical methods to form an ultrathin free-standing film. Individually addressable microdisk LEDs were created by forming thin metal contacts on the p-GaN and n-GaN surfaces in a crossbar configuration. Each microdisk LED that comprised an ultrahigh resolution array of 2500 pixels per inch was found to be uniquely addressable. The devices in free-standing form exhibited stable electrical and optoelectronic characteristics under extreme bending conditions and continuous operation mode despite the absence of a heat dissipating substrate. These results present promising approaches for the fabrication of high-quality inorganic semiconductor devices for ultrahigh resolution and high-performance flexible applications.

我们报告了独立和超薄形式的可单独寻址的氮化镓（GaN）微盘发光二极管（LED）阵列的制造和特性。在SiO ₂ / Si衬底上构图的石墨烯微点上外延生长具有n -GaN，InGaN / GaN量子阱和p -GaN层的高质量GaN微盘阵列。由于石墨烯微粒与生长基质的附着力较弱，使用机械或化学方法很容易将涂覆有聚酰亚胺层的微盘阵列与基质分离，从而形成超薄的自支撑膜。通过在p -GaN和n上形成薄金属触点，创建了可单独寻址的微盘LED。-GaN表面呈交叉配置。发现每个包含每英寸2500像素超高分辨率阵列的微型LED都是唯一可寻址的。尽管没有散热基板，独立式设备在极端弯曲条件和连续操作模式下仍表现出稳定的电气和光电特性。这些结果为制造用于超高分辨率和高性能柔性应用的高质量无机半导体器件提供了有希望的方法。