Single‐Crystal Graphene Wafers: Epitaxial Growth of 6 in. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition (Small 22/2019),Small

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Single‐Crystal Graphene Wafers: Epitaxial Growth of 6 in. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition (Small 22/2019)
Small ( IF 13.0 ) Pub Date : 2019-05-29 , DOI: 10.1002/smll.201970120
Xuefu Zhang _{1,

2,

3} , Tianru Wu _{1,

2} , Qi Jiang _{1,

2,

3} , Huishan Wang _{1,

2} , Hailong Zhu _{1,

2,

3} , Zhiying Chen _{1,

2} , Ren Jiang ₄ , Tianchao Niu ₅ , Zhuojun Li _{1,

2} , Youwei Zhang ₆ , Zhijun Qiu ₆ , Guanghui Yu _{1,

2} , Ang Li _{1,

2} , Shan Qiao _{1,

2} , Haomin Wang _{1,

2} , Qingkai Yu _{1,

2} , Xiaoming Xie _{1,

2,

3,

7}

Affiliation

Single‐crystal graphene wafers (SCGWs) are an essential requirement for graphene's scalable utilization in electronics' circuits. In article number 1805395, Xiaoming Xie and co‐workers grow high quality 6 in. SCGWs by chemical vapor deposition on a unique (111) Cu₈₅Ni₁₅ substrate at 750 °C, taking advantage of the ultra‐flat single crystalline Cu/Ni substrate and nickel's high catalytic power.

中文翻译：

单晶石墨烯晶片：通过化学气相沉积法在750°C的Cu / Ni（111）薄膜上外延生长6英寸单晶石墨烯（Small 22/2019）

单晶石墨烯晶圆（SCGW）是石墨烯在电子电路中可扩展利用的基本要求。谢晓明及其同事在文章编号1805395中，利用超扁平单晶Cu / Ni的优势，在750°C的独特（111）Cu ₈₅ Ni ₁₅衬底上通过化学气相沉积法生长了高质量的6 in。SCGW。基材和镍的高催化能力。

更新日期：2019-05-29

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