Abstract Indium tin oxide (ITO) strain sensors were prepared by RF magnetron sputtering, and then heat treated in nitrogen and air atmosphere, respectively. The effect of air and N2 heat treatment on the piezoresistivity of ITO ceramic strain sensors were investigated at 1200 °C. It was found that although both the ITO ceramic strain sensors heat treated in N2 and air had similar temperature coefficient of resistance (TCR), the ITO strain sensor heat treated in N2 had better resistance stability. In addition, the ITO strain sensor heat treated in N2 had a smaller but more stable gage factor, compared to that in air. These observations were attributed to the increased content of Sn4+ donors and the enhanced photon scattering due to smaller grain sizes after the incorporation of nitrogen into ITO lattice.

中文翻译：

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热处理气氛对氧化铟锡陶瓷应变传感器压阻的影响

摘要 采用射频磁控溅射法制备氧化铟锡（ITO）应变传感器，然后分别在氮气和空气气氛中进行热处理。在 1200 °C 下研究了空气和 N2 热处理对 ITO 陶瓷应变传感器压阻率的影响。结果表明，虽然在 N2 和空气中热处理的 ITO 陶瓷应变传感器具有相似的电阻温度系数 (TCR)，但在 N2 中热处理的 ITO 应变传感器具有更好的电阻稳定性。此外，与在空气中相比，在 N2 中热处理的 ITO 应变传感器具有更小但更稳定的应变系数。这些观察结果归因于在将氮掺入 ITO 晶格后由于较小的晶粒尺寸而增加的 Sn4+ 供体含量和增强的光子散射。