One of the main challenges in stretchable electronics is to achieve high-performance stretchable semiconductors. Here, we introduce an innovative concept of nanomeshed semiconductor nanomembrane which can be regarded almost as intrinsically stretchable to conventional microelectronic layouts. By making a silicon film into homogeneous nanomeshes with spring-like nano traces, we demonstrated a high electron mobility of 50 cm²/V·s, and moderate stretchability with a one-time strain of 25% and cyclic strain of 14% after stretching for 1000 cycles, further improvable with optimized nanomesh designs. A simple analytic model covering both fractional material and trace sidewall surfaces well predicted the transport properties of the normally on silicon nanomesh transistors, enabling future design and optimizations. Besides potential applications in stretchable electronics, this semiconductor nanomesh concept provides a new platform for materials engineering and is expected to yield a new family of stretchable inorganic materials having tunable electronic and optoelectronic properties with customized nanostructures.

可拉伸电子学的主要挑战之一是实现高性能的可拉伸半导体。在这里，我们介绍了一种纳米网状半导体纳米膜的创新概念，该膜几乎可以看作是传统微电子布图的固有可拉伸性。通过将硅膜制成具有类似弹簧的纳米痕迹的均匀纳米网格，我们证明了50 cm ²的高电子迁移率/ V·s，适度的可拉伸性，拉伸1000次后，具有25％的一次性应变和14％的循环应变，通过优化的纳米网格设计可以进一步提高。一个覆盖分数材料和痕量侧壁表面的简单分析模型可以很好地预测通常在硅纳米网格晶体管上的传输特性，从而可以进行未来的设计和优化。除了在可伸缩电子学中的潜在应用之外，这种半导体纳米网的概念还为材料工程提供了一个新平台，并有望生产出具有可调电子和光电特性且具有定制纳米结构的可伸缩无机材料新家族。