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Epitaxial Growth of 6 in. Single‐Crystalline Graphene on a Cu/Ni (111) Film at 750 °C via Chemical Vapor Deposition
Small ( IF 13.0 ) Pub Date : 2019-04-03 , DOI: 10.1002/smll.201805395 Xuefu Zhang 1, 2, 3 , Tianru Wu 1, 2 , Qi Jiang 1, 2, 3 , Huishan Wang 1, 2 , Hailong Zhu 1, 2, 3 , Zhiying Chen 1, 2 , Ren Jiang 4 , Tianchao Niu 5 , Zhuojun Li 1, 2 , Youwei Zhang 6 , Zhijun Qiu 6 , Guanghui Yu 1, 2 , Ang Li 1, 2 , Shan Qiao 1, 2 , Haomin Wang 1, 2 , Qingkai Yu 1, 2 , Xiaoming Xie 1, 2, 3, 7
Small ( IF 13.0 ) Pub Date : 2019-04-03 , DOI: 10.1002/smll.201805395 Xuefu Zhang 1, 2, 3 , Tianru Wu 1, 2 , Qi Jiang 1, 2, 3 , Huishan Wang 1, 2 , Hailong Zhu 1, 2, 3 , Zhiying Chen 1, 2 , Ren Jiang 4 , Tianchao Niu 5 , Zhuojun Li 1, 2 , Youwei Zhang 6 , Zhijun Qiu 6 , Guanghui Yu 1, 2 , Ang Li 1, 2 , Shan Qiao 1, 2 , Haomin Wang 1, 2 , Qingkai Yu 1, 2 , Xiaoming Xie 1, 2, 3, 7
Affiliation
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The future electronic application of graphene highly relies on the production of large‐area high‐quality single‐crystal graphene. However, the growth of single‐crystal graphene on different substrates via either single nucleation or seamless stitching is carried out at a temperature of 1000 °C or higher. The usage of this high temperature generates a variety of problems, including complexity of operation, higher contamination, metal evaporation, and wrinkles owing to the mismatch of thermal expansion coefficients between the substrate and graphene. Here, a new approach for the fabrication of ultraflat single‐crystal graphene using Cu/Ni (111)/sapphire wafers at lower temperature is reported. It is found that the temperature of epitaxial growth of graphene using Cu/Ni (111) can be reduced to 750 °C, much lower than that of earlier reports on catalytic surfaces. Devices made of graphene grown at 750 °C have a carrier mobility up to ≈9700 cm2 V−1 s−1 at room temperature. This work shines light on a way toward a much lower temperature growth of high‐quality graphene in single crystallinity, which could benefit future electronic applications.
中文翻译：
通过化学气相沉积法在750°C的Cu / Ni（111）膜上外延生长6 in。单晶石墨烯
石墨烯的未来电子应用高度依赖于大面积高质量单晶石墨烯的生产。但是，单晶石墨烯通过单核或无缝缝合在不同基板上的生长是在1000°C或更高的温度下进行的。使用这种高温会产生各种问题，包括操作复杂，污染程度更高，金属蒸发以及由于基材和石墨烯之间的热膨胀系数不匹配而引起的皱纹。在这里，报道了一种在较低温度下使用Cu / Ni（111）/蓝宝石晶片制造超扁平单晶石墨烯的新方法。发现使用Cu / Ni（111）外延生长石墨烯的温度可以降低到750°C，比早期关于催化表面的报道要低得多。在750°C下生长的石墨烯制成的器件的载流子迁移率高达≈9700cm室温下为2 V -1 s -1。这项工作为在单晶度下高质量石墨烯的低得多的温度增长提供了可能，这可能会有利于未来的电子应用。
更新日期：2019-04-03
中文翻译：
通过化学气相沉积法在750°C的Cu / Ni（111）膜上外延生长6 in。单晶石墨烯
石墨烯的未来电子应用高度依赖于大面积高质量单晶石墨烯的生产。但是，单晶石墨烯通过单核或无缝缝合在不同基板上的生长是在1000°C或更高的温度下进行的。使用这种高温会产生各种问题，包括操作复杂，污染程度更高，金属蒸发以及由于基材和石墨烯之间的热膨胀系数不匹配而引起的皱纹。在这里，报道了一种在较低温度下使用Cu / Ni（111）/蓝宝石晶片制造超扁平单晶石墨烯的新方法。发现使用Cu / Ni（111）外延生长石墨烯的温度可以降低到750°C，比早期关于催化表面的报道要低得多。在750°C下生长的石墨烯制成的器件的载流子迁移率高达≈9700cm室温下为2 V -1 s -1。这项工作为在单晶度下高质量石墨烯的低得多的温度增长提供了可能，这可能会有利于未来的电子应用。
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