Two-dimensional molybdenum disulfide (MoS₂) has substantial potential as a semiconducting material for devices. However, it is commonly prepared by mechanical exfoliation, which limits flake size to only a few micrometers, which is not sufficient for processes such as photolithography and circuit patterning. Chemical vapor deposition (CVD) has thus become a mainstream fabrication technique to achieve large-area MoS₂. However, reports of conventional photolithographic patterning of large-area 2D MoS₂-based devices with high mobilities and low switching voltages are rare. Here we fabricate CVD-grown large-area MoS₂ field-effect transistors (FETs) by photolithography and demonstrate their potential as switching and driving FETs for pixels in analog organic light-emitting diode (OLED) displays. We spin-coat an ultrathin hydrophobic polystyrene layer on an Al₂O₃ dielectric, so that the uniformity of threshold voltage (V_th) of the FETs might be improved. Our MoS₂ FETs show a high linear mobility of approximately 10 cm² V⁻¹ s⁻¹, due to a large grain size around 60 μm, and a high ON/OFF current ratio of 10⁸. Dynamic switching of blue and green OLED pixels is shown at ~5 V, demonstrating their application potential.

二维二硫化钼（MoS ₂）作为器件的半导体材料具有巨大的潜力。然而，通常通过机械剥落来制备，其将薄片尺寸限制为仅几微米，这对于诸如光刻和电路图案化的工艺是不够的。因此，化学气相沉积（CVD）已成为实现大面积MoS ₂的主流制造技术。然而，很少有关于具有高迁移率和低开关电压的基于大面积的2D MoS ₂的器件的传统光刻图案化的报道。在这里，我们制作了CVD生长的大面积MoS ₂场效应晶体管（FET）的光刻技术，并展示了它们作为模拟有机发光二极管（OLED）显示器中像素的开关和驱动FET的潜力。我们在Al ₂ O ₃电介质上旋涂超薄疏水性聚苯乙烯层，从而可以提高FET的阈值电压（V _th）的均匀性。我们的MoS ₂ FET由于约60μm的大晶粒尺寸和10 ⁸的高开/关电流比而显示出大约10 cm ²  V ^-1  s ^-1的高线性迁移率。蓝色和绿色OLED像素的动态切换显示为〜5 V，表明了它们的应用潜力。