Abstract Epitaxial Ta-doped SnO2 films with Ta concentrations from 0 to 8 at.% have been deposited on MgF2 (110) substrates by the metal-organic chemical vapor deposition (MOCVD) method. The effects of Ta doping on the structural, photoelectrical and photoluminescence (PL) properties of the obtained films were studied in detail. The results showed that the single crystal rutile SnO2 films were obtained and the heteroepitaxial relationship was SnO2 (110) || MgF2 (110) with SnO2 [001] || MgF2 [001]. The highest Hall mobility of 74.2 cm2 V−1 s−1 was achieved for the 5 at.% Ta-doped SnO2 film and the minimum resistivity as low as 2.5 × 10−4 Ω cm was obtained at 6 at.% of Ta-doping. In the visible region, all the obtained films had average transmittances exceeding 87%. As the Ta concentration increased from 0 to 8 at.%, the optical band gap of the films rose from 3.89 to 4.32 eV. The room temperature PL spectra of Ta-doped SnO2 films showed intense green emission, weak violet and yellow emissions. The corresponding PL mechanisms were discussed.

中文翻译：

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在 MgF2 (110) 衬底上生长的 Ta 掺杂 SnO2 单晶薄膜的结构、光电和光致发光特性

摘要 通过金属有机化学气相沉积 (MOCVD) 方法在 MgF2 (110) 衬底上沉积了 Ta 浓度为 0 到 8 at.% 的外延 Ta 掺杂 SnO2 薄膜。详细研究了 Ta 掺杂对所得薄膜的结构、光电和光致发光 (PL) 性能的影响。结果表明得到单晶金红石SnO2薄膜，异质外延关系为SnO2(110)|| MgF2 (110) 与 SnO2 [001] || MgF2 [001]。对于 5 at.% Ta 掺杂的 SnO2 薄膜，实现了 74.2 cm2 V-1 s-1 的最高霍尔迁移率，在 6 at.% Ta- 时获得了低至 2.5 × 10-4 Ω cm 的最小电阻率兴奋剂。在可见光区，所得薄膜的平均透射率均超过 87%。随着 Ta 浓度从 0 at.% 增加到 8 at.%，薄膜的光学带隙从 3.89 eV 上升到 4.32 eV。Ta掺杂的SnO2薄膜的室温PL光谱显示出强烈的绿色发射、弱紫色和黄色发射。讨论了相应的 PL 机制。