Abstract Synthesis of pure and 0.1 to 5 wt.% Gd-doped CdS nanoparticles (NPs) was achieved through a modified domestic microwave-assisted route in a short timespan at 700 W power. The formation of hexagonal CdS NPs was verified via X-ray diffraction analysis, and no structural variation was observed except for lattice variation. The size of the crystallites (D), dislocation concentration, and lattice strain were calculated, and the D was in the range of 3–6 nm. Fourier transform-Raman analysis confirmed the presence of 1LO, 2LO, and 3LO modes at 294.76, 590, and 890 cm−1, respectively, in all the synthesized nanostructures, with minute variations in their positions due to doping; however, no new mode was observed. The position of the vibration modes was red shifted compared to that of the bulk material, indicating a confinement effect. Scanning electron microscopy (SEM) mapping/energy-dispersive X-ray spectroscopy revealed homogeneous doping of Gd and the presence of all the constituents in the final products. The morphology of the synthesized materials was tested via field-emission SEM, which revealed spherical NPs with small dimensions. Additionally, high-resolution transmission electron microscopy was performed to visualize the shape and size of the prepared 0.1% Gd:CdS NPs. The energy gap was calculated using the Kubelka–Munk theory and found to be in the range of 2.31–2.41 eV. The photoluminescence emission spectra exhibited two green emission peaks at 516 ± 2 nm and 555 ± 2 nm and showed the reduction of defects with Gd doping in terms of intensity quenching. The dielectric constant ( e ' ), loss, and alternating-current electrical properties were studied in the high-frequency range. The values of e ' were in the range of 17–27. An enhancement of these values was observed for CdS when it was doped with Gd. The electrical conductivity exhibited frequency power law behavior.

中文翻译：

---

Gd掺杂对光电用CdS纳米粒子的结构、光学性质、光致发光和电学特性的影响

摘要 通过改进的家用微波辅助路线在 700 W 功率下在短时间内合成了纯的和 0.1 至 5 wt.% Gd 掺杂的 CdS 纳米粒子 (NPs)。通过 X 射线衍射分析验证了六方 CdS NPs 的形成，除晶格变化外没有观察到结构变化。计算微晶的尺寸 (D)、位错浓度和晶格应变，D 在 3-6 nm 的范围内。傅里叶变换-拉曼分析证实了在所有合成纳米结构中分别在 294.76、590 和 890 cm-1 处存在 1LO、2LO 和 3LO 模式，由于掺杂，它们的位置发生了微小的变化；然而，没有观察到新的模式。与散装材料相比，振动模式的位置发生了红移，表明存在限制效应。扫描电子显微镜 (SEM) 映射/能量色散 X 射线光谱揭示了 Gd 的均匀掺杂和最终产品中所有成分的存在。通过场发射扫描电镜测试合成材料的形态，显示出具有小尺寸的球形纳米颗粒。此外，还进行了高分辨率透射电子显微镜以观察制备的 0.1% Gd:CdS NPs 的形状和大小。能隙是使用 Kubelka-Munk 理论计算的，发现在 2.31-2.41 eV 的范围内。光致发光发射光谱在 516 ± 2 nm 和 555 ± 2 nm 处显示出两个绿色发射峰，并且在强度猝灭方面显示出随着 Gd 掺杂缺陷的减少。介电常数 (e'), 损耗, 和交流电特性在高频范围内进行了研究。e ' 的值在 17-27 的范围内。当 CdS 掺杂 Gd 时，观察到这些值的增强。电导率表现出频率幂律行为。