Abstract (Sr0.5Ba0.5)1+xNb2-xFexO6 (SBNF-x, 0 ≤ x ≤ 0.20) ceramics were prepared using the conventional solid-state reaction method. With the increase in x, the tungsten bonze structure of the ceramics will transform from “unfilled” to “filled.” The crystallographic parameters obtained using the Rietveld method on XRD patterns were used to explore the determinants of the lattice structure. Lattice parameter a is dominated by the distance of the A1- and A2-sites via the Coulomb interaction. The average bond length of Nb1 O4 controls the change of c due to the symmetrical environment around the Nb1O6 octahedron. High energy storage properties appear in low doping samples. The discharge energy density of SBNF-0.02 is 0.595 J/cm3, with a storage efficiency of 91.3%, and of SBNF-0.04 is 0.680 J/cm3, 5.3 times the value of SBNF-0, with a storage efficiency of 83.6%. SBNF-x (0.02 ≤ x ≤ 0.04) ceramics with high discharge energy density and high storage efficiency are promising candidates for producing high energy density capacitors.

中文翻译：

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探索 Fe 掺杂 SBN 陶瓷晶格结构和高储能性能的决定因素

摘要 (Sr0.5Ba0.5)1+xNb2-xFexO6 (SBNF-x, 0 ≤ x ≤ 0.20) 使用常规固相反应方法制备了陶瓷。随着x的增加，陶瓷的钨合金结构将从“未填充”转变为“填充”。使用 Rietveld 方法对 XRD 图案获得的晶体参数用于探索晶格结构的决定因素。晶格参数 a 由通过库仑相互作用的 A1 和 A2 位点的距离决定。由于 Nb1O6 八面体周围的对称环境，Nb1O4 的平均键长控制了 c 的变化。高能量存储特性出现在低掺杂样品中。SBNF-0.02的放电能量密度为0.595 J/cm3，储能效率为91.3%，SBNF-0.04的放电能量密度为0.680 J/cm3，是SBNF-0的5.3倍，存储效率为 83.6%。具有高放电能量密度和高存储效率的 SBNF-x (0.02 ≤ x ≤ 0.04) 陶瓷是生产高能量密度电容器的有希望的候选材料。