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Silicon-on-insulator free-carrier injection modulators for the mid-infrared
Optics Letters ( IF 3.1 ) Pub Date : 2019-02-11 , DOI: 10.1364/ol.44.000915
M. Nedeljkovic , C. G. Littlejohns , A. Z. Khokhar , M. Banakar , W. Cao , J. Soler Penades , D. T. Tran , F. Y. Gardes , D. J. Thomson , G. T. Reed , H. Wang , G. Z. Mashanovich

Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with 34 dB modulation depth and (b) use free-carrier electrorefraction with the PIN diodes acting as phase shifters in a Mach–Zehnder interferometer, achieving a VπLπ of 0.052 V·mm and a DC modulation depth of 22 dB. Modulation is demonstrated at data rates up to 125 Mbit/s.

中文翻译:

绝缘体上硅用于中红外的无载流子注入调制器

给出了工作在3.8μm的基于绝缘体上硅波导的自由载流子效应调制器的实验演示。PIN二极管用于将载流子注入到波导中,并配置为(a)使用自由载流子电吸收来创建具有34 dB调制深度的可变光衰减器,以及(b)使用自由载流子电折射以PIN二极管作为相位Mach–Zehnder干涉仪中的移位器,实现了伏特π大号π0.052 伏特·毫米直流调制深度为22 dB。在高达125 Mbit / s的数据速率下演示了调制。
更新日期:2019-02-15
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