Experimental demonstrations of silicon-on-insulator waveguide-based free-carrier effect modulators operating at 3.8 μm are presented. PIN diodes are used to inject carriers into the waveguides, and are configured to (a) use free-carrier electroabsorption to create a variable optical attenuator with 34 dB modulation depth and (b) use free-carrier electrorefraction with the PIN diodes acting as phase shifters in a Mach–Zehnder interferometer, achieving a ${\mathit{V}}_{\mathit{\pi }}{\mathit{L}}_{\mathit{\pi }}$ of $0.052\mathrm{V}·\mathrm{mm}$ and a DC modulation depth of 22 dB. Modulation is demonstrated at data rates up to 125 Mbit/s.

中文翻译：

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绝缘体上硅用于中红外的无载流子注入调制器

给出了工作在3.8μm的基于绝缘体上硅波导的自由载流子效应调制器的实验演示。PIN二极管用于将载流子注入到波导中，并配置为（a）使用自由载流子电吸收来创建具有34 dB调制深度的可变光衰减器，以及（b）使用自由载流子电折射以PIN二极管作为相位Mach–Zehnder干涉仪中的移位器，实现了${\mathit{伏特}}_{\mathit{\pi }}{\mathit{大号}}_{\mathit{\pi }}$ 的 $0.052\mathrm{伏特}·\mathrm{毫米}$直流调制深度为22 dB。在高达125 Mbit / s的数据速率下演示了调制。