Large-area graphene films have substantial potential for use as next-generation electrodes because of their good chemical stability, high flexibility, excellent carrier mobility, and lightweight structure. However, various issues remain unsolved. In particular, high-density carrier doping within a short time by a simple method, and air stability of doped graphene films, are highly desirable. Here, we demonstrate a solution-based high-density (>10¹⁴ cm⁻²) hole doping approach that promises to push the performance limit of graphene films. The reaction of graphene films with a tetrakis(pentafluorophenyl)borate salt, containing a two-coordinate boron cation, achieves doping within an extremely short time (4 s), and the doped graphene films are air stable for at least 31 days. X-ray photoelectron spectroscopy reveals that the graphene films are covered by the chemically stable anions, resulting in an improved stability in air. Moreover, the doping reduces the transmittance by only 0.44 ± 0.23%. The simplicity of the doping process offers a viable route to the large-scale production of functional graphene electrodes.

大面积石墨烯薄膜具有良好的化学稳定性，高柔韧性，出色的载流子迁移率和轻质结构，因此具有用作下一代电极的巨大潜力。但是，各种问题仍未解决。特别地，非常需要通过简单的方法在短时间内进行高密度载流子掺杂以及掺杂的石墨烯膜的空气稳定性。在这里，我们展示了基于解决方案的高密度（> 10 ¹⁴  cm ^-2）空穴掺杂方法，有望突破石墨烯薄膜的性能极限。石墨烯薄膜与含有两个配位硼阳离子的四（五氟苯基）硼酸盐的反应，可在极短的时间内（4 s）达到掺杂，并且掺杂的石墨烯薄膜在空气中稳定至少31天。X射线光电子能谱显示，石墨烯薄膜被化学稳定的阴离子所覆盖，从而改善了空气的稳定性。而且，掺杂仅使透射率降低0.44±0.23％。掺杂工艺的简单性为大规模生产功能性石墨烯电极提供了一条可行的途径。