Controlling movements of electrons and holes is the key task in developing today's highly sophisticated information society. As transistors reach their physical limits, the semiconductor industry is seeking the next alternative to sustain its economy and to unfold a new era of human civilization. In this context, a completely new information token, i.e., ions instead of electrons, is promising. The current trend in solid‐state nanoionics for applications in energy storage, sensing, and brain‐type information processing, requires the ability to control the properties of matter at the ultimate atomic scale. Here, a conceptually novel nanoarchitectonic strategy is proposed for controlling the number of dopant atoms in a solid electrolyte to obtain discrete electrical properties. Using α‐Ag_2+δS nanodots with a finite number of nonstoichiometry excess dopants as a model system, a theory matched with experiments is presented that reveals the role of physical parameters, namely, the separation between electrochemical energy levels and the cohesive energy, underlying atomic‐scale manipulation of dopants in nanodots. This strategy can be applied to different nanoscale materials as their properties strongly depend on the number of doping atoms/ions, and has the potential to create a new paradigm based on controlled single atom/ion transfer.

中文翻译：

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用于控制固体电解质纳米点中掺杂原子数的纳米建筑技术

控制电子和空穴的运动是发展当今高度复杂的信息社会的关键任务。随着晶体管达到其物理极限，半导体行业正在寻找下一个替代方案，以维持其经济发展和人类文明的新纪元。在这种情况下，一个崭新的信息令牌是有希望的，即离子代替电子。固态纳米离子在能量存储，传感和脑型信息处理中的应用的当前趋势要求在最终原子尺度上控制物质性质的能力。在此，提出了一种概念上新颖的纳米建筑策略，用于控制固体电解质中掺杂原子的数量，以获得离散的电性能。使用α‐Ag 2 _{+ δ}以有限数量的非化学计量的过量掺杂剂作为模型系统的S纳米点，提出了与实验匹配的理论，揭示了物理参数的作用，即电化学能级与内聚能之间的分离，掺杂剂的基本原子尺度操纵以纳米点为单位。该策略可应用于不同的纳米级材料，因为它们的性能很大程度上取决于掺杂原子/离子的数量，并且有可能基于可控的单个原子/离子转移创建新的范例。